MOSFETs

MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. It acts very similarly to a switch and is used for switching or amplifying electronic signals.


These semiconductor devices are ICs (integrated circuits) which are mounted onto PCBs. MOSFETs come in a range of standard package types such as DPAK, D2PAK, DFN, I2PAK, SOIC, SOT-223 and TO-220. For more information about MOSFETs, please see our complete guide to MOSFETs.


What are depletion and enhancement modes?


MOSFET transistors have two modes; depletion and enhancement.
Depletion MOSFETs work like a closed switch. The current passes through when no current is applied. The current flow will stop if a negative voltage is applied.
Enhancement mode MOSFETs are similar to a variable resistor and are generally more popular than the depletion mode MOSFETs. They come in n-channel or p-channel variants.


How do MOSFETs work?


The pins on a MOSFET package are the Source, Gate and Drain. When a voltage is applied between the Gate and the Source terminals, current can pass through from the Drain to the Source pins. When the voltage applied to the Gate changes, the resistance from the Drain to the Source will change too. The lower the voltage applied, the higher the resistance. As the voltage increases, the resistance from the Drain to Source will decrease.
Power MOSFETs are similar to standard MOSFETs but they are designed to handle a higher level of power.


N-Channel vs. P-Channel MOSFETs


MOSFETs are made of p-type or n-type doped silicon.


  • N-Channel MOSFETS contain additional electrons which are free to move around. They are the more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.


  • P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the Gate terminal is lower than the Source voltage.

Where are MOSFETs used?


MOSFETs are found within many applications, such as microprocessors and other memory components. MOSFET transistors are most commonly used as a voltage-controlled switch within circuits.



Looking for MOSFET Drivers?


...
Read more Read less

Filters

Viewing 61 - 80 of 10694 products
Results per page
Description Price Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Package Type Mounting Type Pin Count Maximum Gate Source Voltage Channel Mode Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Power Dissipation Transistor Configuration Number of Elements per Chip
RS Stock No. 687-5169
Mfr. Part No.STD30NF06LT4
£0.622
Each (In a Pack of 10)
Units
N 35 A 60 V 28 mΩ DPAK (TO-252) Surface Mount 3 -20 V, +20 V Enhancement 2.5V 1V 70 W Single 1
RS Stock No. 913-4802
Mfr. Part No.IRLR2905TRPBF
BrandInfineon
£0.392
Each (On a Reel of 2000)
Units
N 42 A 55 V 40 mΩ DPAK (TO-252) Surface Mount 3 -16 V, +16 V Enhancement 2V 1V 110 W Single 1
RS Stock No. 830-3357
Mfr. Part No.IRLR2905TRPBF
BrandInfineon
£0.767
Each (In a Pack of 20)
Units
N 42 A 55 V 40 mΩ DPAK (TO-252) Surface Mount 3 -16 V, +16 V Enhancement 2V 1V 110 W Single 1
RS Stock No. 168-4813
Mfr. Part No.IXFK100N65X2
BrandIXYS
£8.284
Each (In a Tube of 25)
Units
N 100 A 650 V 30 mΩ TO-264P Through Hole 3 -30 V, +30 V Enhancement 5V 2.7V 1.04 kW Single 1
RS Stock No. 917-1429
Mfr. Part No.IXFK100N65X2
BrandIXYS
£9.39
Each
Units
N 100 A 650 V 30 mΩ TO-264P Through Hole 3 -30 V, +30 V Enhancement 5V 2.7V 1.04 kW Single 1
RS Stock No. 919-4814
Mfr. Part No.IRLZ44NPBF
BrandInfineon
£0.656
Each (In a Tube of 50)
Units
N 47 A 55 V 22 mΩ TO-220AB Through Hole 3 -16 V, +16 V Enhancement 2V 1V 110 W Single 1
RS Stock No. 541-0086
Mfr. Part No.IRLZ44NPBF
BrandInfineon
£0.78
Each
Units
N 47 A 55 V 22 mΩ TO-220AB Through Hole 3 -16 V, +16 V Enhancement 2V 1V 110 W Single 1
RS Stock No. 166-1711
Mfr. Part No.FDV304P
£0.033
Each (On a Reel of 3000)
Units
P 460 mA 25 V 1.1 Ω SOT-23 Surface Mount 3 +8 V Enhancement - 0.65V 350 mW Single 1
RS Stock No. 354-4913
Mfr. Part No.FDV304P
£0.22
Each
Units
P 460 mA 25 V 1.1 Ω SOT-23 Surface Mount 3 +8 V Enhancement - 0.65V 350 mW Single 1
RS Stock No. 541-0828
Mfr. Part No.IRF9530NPBF
BrandInfineon
£0.72
Each
Units
P 14 A 100 V 200 mΩ TO-220AB Through Hole 3 -20 V, +20 V Enhancement 4V 2V 79 W Single 1
RS Stock No. 919-4769
Mfr. Part No.IRFZ44NPBF
BrandInfineon
£0.73
Each (In a Tube of 50)
Units
N 49 A 55 V 17.5 mΩ TO-220AB Through Hole 3 -20 V, +20 V Enhancement 4V 2V 94 W Single 1
RS Stock No. 540-9777
Mfr. Part No.IRFZ44NPBF
BrandInfineon
£0.85
Each
Units
N 49 A 55 V 17.5 mΩ TO-220AB Through Hole 3 -20 V, +20 V Enhancement 4V 2V 94 W Single 1
RS Stock No. 541-0755
Mfr. Part No.IRF530NPBF
BrandInfineon
£0.71
Each
Units
N 17 A 100 V 90 mΩ TO-220AB Through Hole 3 -20 V, +20 V Enhancement 4V 2V 70 W Single 1
RS Stock No. 919-4860
Mfr. Part No.IRF9530NPBF
BrandInfineon
£0.611
Each (In a Tube of 50)
Units
P 14 A 100 V 200 mΩ TO-220AB Through Hole 3 -20 V, +20 V Enhancement 4V 2V 79 W Single 1
RS Stock No. 919-4842
Mfr. Part No.IRF530NPBF
BrandInfineon
£0.589
Each (In a Tube of 50)
Units
N 17 A 100 V 90 mΩ TO-220AB Through Hole 3 -20 V, +20 V Enhancement 4V 2V 70 W Single 1
RS Stock No. 917-1441
Mfr. Part No.IXTK120N65X2
BrandIXYS
£13.19
Each
Units
N 120 A 650 V 23 mΩ TO-264P Through Hole 3 -30 V, +30 V Enhancement 5V 3V 1.25 kW Single 1
RS Stock No. 168-4816
Mfr. Part No.IXTK120N65X2
BrandIXYS
£11.618
Each (In a Tube of 25)
Units
N 120 A 650 V 23 mΩ TO-264P Through Hole 3 -30 V, +30 V Enhancement 5V 3V 1.25 kW Single 1
RS Stock No. 919-4722
Mfr. Part No.IRLML6402TRPBF
BrandInfineon
£0.081
Each (On a Reel of 3000)
Units
P 3.7 A 20 V 65 mΩ SOT-23 Surface Mount 3 -12 V, +12 V Enhancement 1.2V 0.4V 1.3 W Single 1
RS Stock No. 541-1720
Mfr. Part No.IRF5210PBF
BrandInfineon
£1.56
Each
Units
P 40 A 100 V 60 mΩ TO-220AB Through Hole 3 -20 V, +20 V Enhancement 4V 2V 200 W Single 1
RS Stock No. 919-4915
Mfr. Part No.IRF5210PBF
BrandInfineon
£1.336
Each (In a Tube of 50)
Units
P 40 A 100 V 60 mΩ TO-220AB Through Hole 3 -20 V, +20 V Enhancement 4V 2V 200 W Single 1
Related Products
ON Semiconductors range of P-Channel MOSFETS are produced ...
Description:
ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching. • Voltage controlled P-Channel small signal switch• High-Density cell design • ...
Enhancement Mode Field Effect Transistors (FET) are produced ...
Description:
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching. Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor. MOSFET Transistors, ON Semi.
2N7000 is an enhancement-mode (normally-off) transistor that utilizes ...
Description:
2N7000 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device ...
This low threshold, enhancement-mode (normally-off) transistor utilizes a ...
Description:
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is ...