Infineon HEXFET N-Channel MOSFET, 270 A, 60 V, 3-Pin TO-220AB IRLB3036PBF
- RS Stock No.:
- 688-7213
- Mfr. Part No.:
- IRLB3036PBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
£5.08
(exc. VAT)
£6.10
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 46 unit(s) ready to ship
- Plus 582 unit(s) shipping from 09 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | £2.54 | £5.08 |
| 20 - 48 | £2.335 | £4.67 |
| 50 - 98 | £2.185 | £4.37 |
| 100 - 198 | £2.03 | £4.06 |
| 200 + | £1.88 | £3.76 |
*price indicative
- RS Stock No.:
- 688-7213
- Mfr. Part No.:
- IRLB3036PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 270 A | |
| Maximum Drain Source Voltage | 60 V | |
| Series | HEXFET | |
| Package Type | TO-220AB | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 2 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 380 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -16 V, +16 V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Width | 4.83mm | |
| Typical Gate Charge @ Vgs | 91 nC @ 4.5 V | |
| Maximum Operating Temperature | +175 °C | |
| Length | 10.67mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 9.02mm | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 270 A | ||
Maximum Drain Source Voltage 60 V | ||
Series HEXFET | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 2 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 380 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -16 V, +16 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 4.83mm | ||
Typical Gate Charge @ Vgs 91 nC @ 4.5 V | ||
Maximum Operating Temperature +175 °C | ||
Length 10.67mm | ||
Minimum Operating Temperature -55 °C | ||
Height 9.02mm | ||
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