MOSFETs

MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. It acts very similarly to a switch and is used for switching or amplifying electronic signals.


These semiconductor devices are ICs (integrated circuits) which are mounted onto PCBs. MOSFETs come in a range of standard package types such as DPAK, D2PAK, DFN, I2PAK, SOIC, SOT-223 and TO-220.


What are depletion and enhancement modes?


MOSFET transistors have two modes; depletion and enhancement.
Depletion MOSFETs work like a closed switch. The current passes through when no current is applied. The current flow will stop if a negative voltage is applied.
Enhancement mode MOSFETs are similar to a variable resistor and are generally more popular than the depletion mode MOSFETs. They come in n-channel or p-channel variants.


How do MOSFETs work?


The pins on a MOSFET package are the Source, Gate and Drain. When a voltage is applied between the Gate and the Source terminals, current can pass through from the Drain to the Source pins. When the voltage applied to the Gate changes, the resistance from the Drain to the Source will change too. The lower the voltage applied, the higher the resistance. As the voltage increases, the resistance from the Drain to Source will decrease.
Power MOSFETs are similar to standard MOSFETs but they are designed to handle a higher level of power.


N-Channel vs. P-Channel MOSFETs


MOSFETs are made of p-type or n-type doped silicon.


  • N-Channel MOSFETS contain additional electrons which are free to move around. They are the more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.


  • P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the Gate terminal is lower than the Source voltage.

Where are MOSFETs used?


MOSFETs are found within many applications, such as microprocessors and other memory components. MOSFET transistors are most commonly used as a voltage-controlled switch within circuits.



Looking for MOSFET Drivers?


...
Read more Read less

Filters

Viewing 1 - 20 of 11751 products
Results per page
Description Price Channel Type PRICED TO CLEAR Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Gate Source Voltage Package Type Mounting Type Pin Count Transistor Configuration Channel Mode Maximum Power Dissipation
RS Stock No. 124-1745
Mfr. Part No.BS170
£0.069
Each (In a Bag of 1000)
Units
N - 500 mA 60 V 5 Ω 3V 0.8V -20 V, +20 V TO-92 Through Hole 3 Single Enhancement 830 mW
RS Stock No. 671-4736
Mfr. Part No.BS170
£0.225
Each (In a Pack of 10)
Units
N - 500 mA 60 V 5 Ω 3V 0.8V -20 V, +20 V TO-92 Through Hole 3 Single Enhancement 830 mW
RS Stock No. 671-4733
Mfr. Part No.2N7000
£0.197
Each (In a Pack of 20)
Units
N - 200 mA 60 V 5 Ω - 0.8V -20 V, +20 V TO-92 Through Hole 3 Single Enhancement 400 mW
RS Stock No. 739-0224
Mfr. Part No.2N7000TA
£0.20
Each (In a Pack of 10)
Units
N - 200 mA 60 V 5 Ω - 0.3V -30 V, +30 V TO-92 Through Hole 3 Single Enhancement 400 mW
RS Stock No. 903-4074
Mfr. Part No.2N7000-D26Z
£0.164
Each (In a Pack of 100)
Units
N - 200 mA 60 V 9 Ω - 0.8V -40 V, +40 V TO-92 Through Hole 3 Single Enhancement 400 mW
RS Stock No. 124-1310
Mfr. Part No.2N7000TA
£0.049
Each (On a Reel of 2000)
Units
N - 200 mA 60 V 5 Ω - 0.3V -30 V, +30 V TO-92 Through Hole 3 Single Enhancement 400 mW
RS Stock No. 169-8553
Mfr. Part No.2N7000
£0.067
Each (On a Reel of 10000)
Units
N - 200 mA 60 V 5 Ω - 0.8V -20 V, +20 V TO-92 Through Hole 3 Single Enhancement 400 mW
RS Stock No. 541-1247
Mfr. Part No.IRLZ34NPBF
BrandInfineon
£1.98
Each
Units
N - 30 A 55 V 35 mΩ 2V 1V -16 V, +16 V TO-220AB Through Hole 3 Single Enhancement 68 W
RS Stock No. 919-4898
Mfr. Part No.IRLZ34NPBF
BrandInfineon
£0.735
Each (In a Tube of 50)
Units
N - 30 A 55 V 35 mΩ 2V 1V -16 V, +16 V TO-220AB Through Hole 3 Single Enhancement 68 W
RS Stock No. 541-1180
Mfr. Part No.IRF520NPBF
BrandInfineon
£1.98
Each
Units
N - 9.7 A 100 V 200 mΩ 4V 2V -20 V, +20 V TO-220AB Through Hole 3 Single Enhancement 48 W
RS Stock No. 919-4876
Mfr. Part No.IRF520NPBF
BrandInfineon
£0.627
Each (In a Tube of 50)
Units
N - 9.7 A 100 V 200 mΩ 4V 2V -20 V, +20 V TO-220AB Through Hole 3 Single Enhancement 48 W
RS Stock No. 124-1694
Mfr. Part No.BSS138
£0.035
Each (On a Reel of 3000)
Units
N - 220 mA 50 V 3.5 Ω 1.5V 0.8V -20 V, +20 V SOT-23 Surface Mount 3 Single Enhancement 360 mW
RS Stock No. 671-0324
Mfr. Part No.BSS138
£0.173
Each (In a Pack of 10)
Units
N - 220 mA 50 V 3.5 Ω 1.5V 0.8V -20 V, +20 V SOT-23 Surface Mount 3 Single Enhancement 360 mW
RS Stock No. 103-8398
Mfr. Part No.2N7002,215
BrandNexperia
£0.023
Each (On a Reel of 3000)
Units
N - 300 mA 60 V 5 Ω 2.5V 1V -30 V, +30 V SOT-23 (TO-236AB) Surface Mount 3 Single Enhancement 830 mW
RS Stock No. 436-7379
Mfr. Part No.2N7002,215
BrandNexperia
£0.108
Each (In a Pack of 25)
Units
N - 300 mA 60 V 5 Ω 2.5V 1V -30 V, +30 V SOT-23 (TO-236AB) Surface Mount 3 Single Enhancement 830 mW
RS Stock No. 295-703
Mfr. Part No.RFP12N10L
£2.00
Each
Units
N - 12 A 100 V 200 mΩ - 1V -10 V, +10 V TO-220AB Through Hole 3 Single Enhancement 60 W
RS Stock No. 368-3197
Mfr. Part No.RFP12N10L
£0.646
Each (In a Tube of 50)
Units
N - 12 A 100 V 200 mΩ - 1V -10 V, +10 V TO-220AB Through Hole 3 Single Enhancement 60 W
RS Stock No. 124-9024
Mfr. Part No.IRLB3034PBF
BrandInfineon
£1.676
Each (In a Tube of 50)
Units
N - 343 A 40 V 2 mΩ 2.5V 1V -20 V, +20 V TO-220AB Through Hole 3 Single Enhancement 375 W
RS Stock No. 688-7204
Mfr. Part No.IRLB3034PBF
BrandInfineon
£2.80
Each (In a Pack of 2)
Units
N - 343 A 40 V 2 mΩ 2.5V 1V -20 V, +20 V TO-220AB Through Hole 3 Single Enhancement 375 W
RS Stock No. 124-1400
Mfr. Part No.FQP30N06L
£0.78
Each (In a Tube of 50)
Units
N - 32 A 60 V 45 mΩ - 1V -20 V, +20 V TO-220 Through Hole 3 Single Enhancement 79 W
Related Products
UItraFET® Trench MOSFET combine characteristics that enable benchmark ...
Description:
UItraFET® Trench MOSFET combine characteristics that enable benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total ...
Enhancement Mode Field Effect Transistors (FET) are produced ...
Description:
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
Enhancement Mode Field Effect Transistors (FET) are produced ...
Description:
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
Enhancement Mode Field Effect Transistors are produced using ...
Description:
Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching. • DMOS Technology• High saturation current • High density cell design• Copper lead frame for ...