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Bipolar NPN power transistors designed for use in ...
Description:
Bipolar NPN power transistors designed for use in ESBC™ (Emitter-Switched Bipolar/MOSFET Cascode) configurations together with appropriate power MOSFET devices. This power switch configuration provides increased efficiency, flexibility and robustness and driving power is minimized due to the absence of Miller capacitance in the design.
A range of JFET (junction field-effect transistor) and ...
Description:
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
A range of JFET (junction field-effect transistor) and ...
Description:
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
A range of JFET (junction field-effect transistor) and ...
Description:
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.