Infineon HEXFET N-Channel MOSFET, 270 A, 60 V, 3-Pin TO-220AB IRLB3036PBF

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

270 A

Maximum Drain Source Voltage

60 V

Series

HEXFET

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

380 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Width

4.83mm

Length

10.67mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

91 nC @ 4.5 V

Number of Elements per Chip

1

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

9.02mm