Infineon HEXFET N-Channel MOSFET, 270 A, 60 V, 3-Pin TO-220AB IRLB3036PBF

Save 27% when you buy 250 units

Subtotal (1 tube of 50 units)*

£107.35

(exc. VAT)

£128.80

(inc. VAT)

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  • 550 unit(s) ready to ship
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Units
Per unit
Per Tube*
50 - 50£2.147£107.35
100 - 200£1.653£82.65
250 +£1.546£77.30

*price indicative

RS Stock No.:
124-9025
Mfr. Part No.:
IRLB3036PBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

270 A

Maximum Drain Source Voltage

60 V

Series

HEXFET

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

380 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.67mm

Typical Gate Charge @ Vgs

91 nC @ 4.5 V

Width

4.83mm

Transistor Material

Si

Height

9.02mm

Minimum Operating Temperature

-55 °C

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