Infineon HEXFET Silicon N-Channel MOSFET, 270 A, 60 V, 3-Pin TO-247 IRFP3006PBF

RS Stock No.:: 260-5869
Distrelec Article No.:: 302-84-049
Mfr. Part No.:: IRFP3006PBF
Brand:: Infineon

Infineon HEXFET Silicon N-Channel MOSFET, 270 A, 60 V, 3-Pin TO-247 IRFP3006PBF

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Units	Per unit
1 - 9	£4.66
10 - 24	£4.43
25 - 49	£4.25
50 - 99	£4.05
100 +	£3.77

*price indicative

RS Stock No.:: 260-5869
Distrelec Article No.:: 302-84-049
Mfr. Part No.:: IRFP3006PBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	270 A
	Maximum Drain Source Voltage	60 V
	Package Type	TO-247
	Series	HEXFET
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	2.5 m?
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	375 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	± 20 V
	Transistor Material	Silicon
	Maximum Operating Temperature	+175 °C
	Typical Gate Charge @ Vgs	200 nC
	Length	15.87mm
	Number of Elements per Chip	1
	Width	5.31mm
	Minimum Operating Temperature	-55 °C
	Height	20.7mm
	Forward Diode Voltage	1.3V

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 270 A
	Maximum Drain Source Voltage 60 V
	Package Type TO-247
	Series HEXFET
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 2.5 m?
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 375 W
	Transistor Configuration Single
	Maximum Gate Source Voltage ± 20 V
	Transistor Material Silicon
	Maximum Operating Temperature +175 °C
	Typical Gate Charge @ Vgs 200 nC
	Length 15.87mm
	Number of Elements per Chip 1
	Width 5.31mm
	Minimum Operating Temperature -55 °C
	Height 20.7mm
	Forward Diode Voltage 1.3V

Datasheet - IRFP3006PBF

Infineon HEXFET Series MOSFET, 270A Maximum Continuous Drain Current, 60V Maximum Drain Source Voltage - IRFP3006PBF

This high-performance MOSFET is a critical component for modern electronic applications, designed with enhanced efficiency and reliability in mind. The dimensions of this TO-247 package include a length of 15.87mm, width of 5.31mm, and height of 20.7mm. It operates effectively in a variety of environments and contributes significant value in power management situations.

Features & Benefits

• High continuous drain current rated at 270A for demanding requirements
• 60V drain-source capability for versatile usage
• Maximum power dissipation of 375W supports robust performance
• Enhanced avalanche capability for better system protection
• Through-hole mounting ensures solid and dependable installation

Applications

• Utilised in high-efficiency synchronous rectification systems
• Ideal for uninterruptible power supplies to ensure reliability
• Effective in high-speed power switching
• Suitable for hard-switched and high-frequency circuitry

What thermal performance can be expected under continuous operating conditions?

With a maximum operating temperature of +175°C, it reliably handles high thermal loads, while the thermal resistance from junction to case supports efficient heat dissipation.

How does the gate threshold voltage contribute to its performance in circuits?

It features a maximum gate threshold voltage of 4V, ensuring that control signals activate the MOSFET effectively, providing synergy with lower voltage control circuits.

What are the implications of the low Rds(on) for circuit efficiency?

A low on-resistance of 2.5mΩ significantly reduces energy losses, enhancing overall circuit efficiency, especially in power-intensive applications, which translates into lower heat generation and improved performance sustainability.