Infineon HEXFET Silicon N-Channel MOSFET, 270 A, 60 V, 3-Pin TO-247 IRFP3006PBF
- RS Stock No.:
- 260-5869
- Distrelec Article No.:
- 302-84-049
- Mfr. Part No.:
- IRFP3006PBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 unit)*
£4.66
(exc. VAT)
£5.59
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 113 unit(s) ready to ship
- Plus 7 unit(s) ready to ship from another location
- Plus 764 unit(s) shipping from 08 October 2025
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Units | Per unit |
|---|---|
| 1 - 9 | £4.66 |
| 10 - 24 | £4.43 |
| 25 - 49 | £4.25 |
| 50 - 99 | £4.05 |
| 100 + | £3.77 |
*price indicative
- RS Stock No.:
- 260-5869
- Distrelec Article No.:
- 302-84-049
- Mfr. Part No.:
- IRFP3006PBF
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 270 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | TO-247 | |
| Series | HEXFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 2.5 m? | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 375 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ± 20 V | |
| Transistor Material | Silicon | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 200 nC | |
| Number of Elements per Chip | 1 | |
| Length | 15.87mm | |
| Width | 5.31mm | |
| Forward Diode Voltage | 1.3V | |
| Height | 20.7mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 270 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type TO-247 | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 2.5 m? | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 375 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ± 20 V | ||
Transistor Material Silicon | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 200 nC | ||
Number of Elements per Chip 1 | ||
Length 15.87mm | ||
Width 5.31mm | ||
Forward Diode Voltage 1.3V | ||
Height 20.7mm | ||
Minimum Operating Temperature -55 °C | ||
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