Infineon HEXFET N-Channel MOSFET, 270 A, 60 V, 3-Pin D2PAK IRLS3036TRLPBF
- RS Stock No.:
- 168-6039
- Mfr. Part No.:
- IRLS3036TRLPBF
- Brand:
- Infineon
Subtotal (1 reel of 800 units)*
£960.00
(exc. VAT)
£1,152.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 3,200 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 800 + | £1.20 | £960.00 |
*price indicative
- RS Stock No.:
- 168-6039
- Mfr. Part No.:
- IRLS3036TRLPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 270 A | |
| Maximum Drain Source Voltage | 60 V | |
| Series | HEXFET | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 2.8 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 380 W | |
| Maximum Gate Source Voltage | -16 V, +16 V | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 91 nC @ 4.5 V | |
| Length | 10.67mm | |
| Width | 4.83mm | |
| Number of Elements per Chip | 1 | |
| Height | 9.65mm | |
| Forward Diode Voltage | 1.3V | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 270 A | ||
Maximum Drain Source Voltage 60 V | ||
Series HEXFET | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 2.8 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 380 W | ||
Maximum Gate Source Voltage -16 V, +16 V | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 91 nC @ 4.5 V | ||
Length 10.67mm | ||
Width 4.83mm | ||
Number of Elements per Chip 1 | ||
Height 9.65mm | ||
Forward Diode Voltage 1.3V | ||
Minimum Operating Temperature -55 °C | ||
N-Channel Power MOSFET 60V to 80V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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