Infineon HEXFET Silicon N-Channel MOSFET, 270 A, 60 V, 3-Pin TO-247 IRFP3006PBF
- RS Stock No.:
- 260-5868
- Mfr. Part No.:
- IRFP3006PBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 25 units)*
£76.025
(exc. VAT)
£91.225
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 750 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
---|---|---|
25 - 25 | £3.041 | £76.03 |
50 - 100 | £2.889 | £72.23 |
125 - 225 | £2.767 | £69.18 |
250 - 475 | £2.646 | £66.15 |
500 + | £2.524 | £63.10 |
*price indicative
- RS Stock No.:
- 260-5868
- Mfr. Part No.:
- IRFP3006PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 270 A | |
Maximum Drain Source Voltage | 60 V | |
Package Type | TO-247 | |
Series | HEXFET | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Channel Mode | Enhancement | |
Transistor Material | Silicon | |
Number of Elements per Chip | 1 | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 270 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type TO-247 | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Transistor Material Silicon | ||
Number of Elements per Chip 1 | ||
Infineon HEXFET Series MOSFET, 270A Maximum Continuous Drain Current, 60V Maximum Drain Source Voltage - IRFP3006PBF
This high-performance MOSFET is a critical component for modern electronic applications, designed with enhanced efficiency and reliability in mind. The dimensions of this TO-247 package include a length of 15.87mm, width of 5.31mm, and height of 20.7mm. It operates effectively in a variety of environments and contributes significant value in power management situations.
Features & Benefits
• High continuous drain current rated at 270A for demanding requirements
• 60V drain-source capability for versatile usage
• Maximum power dissipation of 375W supports robust performance
• Enhanced avalanche capability for better system protection
• Through-hole mounting ensures solid and dependable installation
• 60V drain-source capability for versatile usage
• Maximum power dissipation of 375W supports robust performance
• Enhanced avalanche capability for better system protection
• Through-hole mounting ensures solid and dependable installation
Applications
• Utilised in high-efficiency synchronous rectification systems
• Ideal for uninterruptible power supplies to ensure reliability
• Effective in high-speed power switching
• Suitable for hard-switched and high-frequency circuitry
• Ideal for uninterruptible power supplies to ensure reliability
• Effective in high-speed power switching
• Suitable for hard-switched and high-frequency circuitry
What thermal performance can be expected under continuous operating conditions?
With a maximum operating temperature of +175°C, it reliably handles high thermal loads, while the thermal resistance from junction to case supports efficient heat dissipation.
How does the gate threshold voltage contribute to its performance in circuits?
It features a maximum gate threshold voltage of 4V, ensuring that control signals activate the MOSFET effectively, providing synergy with lower voltage control circuits.
What are the implications of the low Rds(on) for circuit efficiency?
A low on-resistance of 2.5mΩ significantly reduces energy losses, enhancing overall circuit efficiency, especially in power-intensive applications, which translates into lower heat generation and improved performance sustainability.
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