Name: Infineon HEXFET Silicon N-Channel MOSFET, 270 A, 60 V, 3-Pin TO-247 IRFP3006PBF
Brand: Infineon
SKU: 260-5868
Price: 3.65 GBP
Availability: InStock

Infineon HEXFET Series MOSFET, 270A Maximum Continuous Drain Current, 60V Maximum Drain Source Voltage - IRFP3006PBF

This high-performance MOSFET is a critical component for modern electronic applications, designed with enhanced efficiency and reliability in mind. The dimensions of this TO-247 package include a length of 15.87mm, width of 5.31mm, and height of 20.7mm. It operates effectively in a variety of environments and contributes significant value in power management situations.

Features & Benefits

• High continuous drain current rated at 270A for demanding requirements
• 60V drain-source capability for versatile usage
• Maximum power dissipation of 375W supports robust performance
• Enhanced avalanche capability for better system protection
• Through-hole mounting ensures solid and dependable installation

Applications

• Utilised in high-efficiency synchronous rectification systems
• Ideal for uninterruptible power supplies to ensure reliability
• Effective in high-speed power switching
• Suitable for hard-switched and high-frequency circuitry

What thermal performance can be expected under continuous operating conditions?

With a maximum operating temperature of +175°C, it reliably handles high thermal loads, while the thermal resistance from junction to case supports efficient heat dissipation.

How does the gate threshold voltage contribute to its performance in circuits?

It features a maximum gate threshold voltage of 4V, ensuring that control signals activate the MOSFET effectively, providing synergy with lower voltage control circuits.

What are the implications of the low Rds(on) for circuit efficiency?

A low on-resistance of 2.5mΩ significantly reduces energy losses, enhancing overall circuit efficiency, especially in power-intensive applications, which translates into lower heat generation and improved performance sustainability.

Units	Per unit	Per Tube*
25 - 25	£3.041	£76.03
50 - 100	£2.889	£72.23
125 - 225	£2.767	£69.18
250 - 475	£2.646	£66.15
500 +	£2.524	£63.10

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	270 A
	Maximum Drain Source Voltage	60 V
	Package Type	TO-247
	Series	HEXFET
	Mounting Type	Through Hole
	Pin Count	3
	Channel Mode	Enhancement
	Transistor Material	Silicon
	Number of Elements per Chip	1

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 270 A
	Maximum Drain Source Voltage 60 V
	Package Type TO-247
	Series HEXFET
	Mounting Type Through Hole
	Pin Count 3
	Channel Mode Enhancement
	Transistor Material Silicon
	Number of Elements per Chip 1

Infineon HEXFET Silicon N-Channel MOSFET, 270 A, 60 V, 3-Pin TO-247 IRFP3006PBF

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