Infineon HEXFET N-Channel MOSFET, 62 A, 30 V, 3-Pin TO-220AB IRLB8721PBF
- RS Stock No.:
- 725-9322
- Mfr. Part No.:
- IRLB8721PBF
- Brand:
- Infineon
Subtotal (1 pack of 5 units)*
£4.20
(exc. VAT)
£5.05
(inc. VAT)
FREE delivery for orders over £50.00
- 1,630 left, ready to ship
- Plus 170 left, ready to ship from another location
- Final 85 unit(s) shipping from 29 October 2025
Units | Per unit | Per Pack* |
---|---|---|
5 - 45 | £0.84 | £4.20 |
50 - 120 | £0.798 | £3.99 |
125 - 245 | £0.706 | £3.53 |
250 - 495 | £0.664 | £3.32 |
500 + | £0.614 | £3.07 |
*price indicative
- RS Stock No.:
- 725-9322
- Mfr. Part No.:
- IRLB8721PBF
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 62 A | |
Maximum Drain Source Voltage | 30 V | |
Package Type | TO-220AB | |
Series | HEXFET | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 9 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 2.35V | |
Minimum Gate Threshold Voltage | 1.35V | |
Maximum Power Dissipation | 65 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Typical Gate Charge @ Vgs | 7.6 nC @ 4.5 V | |
Maximum Operating Temperature | +175 °C | |
Number of Elements per Chip | 1 | |
Length | 10.67mm | |
Width | 4.83mm | |
Transistor Material | Si | |
Height | 9.02mm | |
Minimum Operating Temperature | -55 °C | |
Forward Diode Voltage | 1V | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 62 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type TO-220AB | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 9 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.35V | ||
Minimum Gate Threshold Voltage 1.35V | ||
Maximum Power Dissipation 65 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 7.6 nC @ 4.5 V | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Length 10.67mm | ||
Width 4.83mm | ||
Transistor Material Si | ||
Height 9.02mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1V | ||
Infineon HEXFET Series MOSFET, 30V Maximum Drain Source Voltage, 62A Maximum Continuous Drain Current - IRLB8721PBF
Features & Benefits
• Engineered for high current use efficiently
• Fully characterised for avalanche voltage and current
• Minimal gate charge enhances switching performance
• Versatile mounting options simplify integration into designs
Applications
• Effective in high-frequency isolated DC-DC converters
• Suitable for synchronous rectification in industrial solutions
• Key component in computer processor power supplies
What is the significance of the device's low Rds(on)?
How does the maximum gate threshold voltage affect device performance?
What considerations should be made for thermal management in applications?
Can this MOSFET be used in automotive applications?
Related links
- Infineon HEXFET N-Channel MOSFET 30 V, 3-Pin TO-220AB IRLB8721PBF
- Infineon HEXFET N-Channel MOSFET 100 V TO-220AB IRFB4510PBF
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin TO-220AB IRFB4510PBF
- Infineon HEXFET N-Channel MOSFET 55 V, 3-Pin DPAK IRFR48ZTRLPBF
- Infineon HEXFET N-Channel MOSFET 200 V D²Pak, TO-262 IRFS4227TRLPBF
- Infineon HEXFET Dual N-Channel MOSFET Transistor & Diode 55 V, 3-Pin DPAK AUIRFR48ZTRL
- Infineon HEXFET N-Channel MOSFET 30 V, 3-Pin TO-220AB IRLB8743PBF
- Infineon HEXFET N-Channel MOSFET 30 V, 3-Pin TO-220AB IRLB8314PBF