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Infineon HEXFET N-Channel MOSFET, 62 A, 30 V, 3-Pin TO-220AB IRLB8721PBF

RS Stock No.:: 725-9322
Mfr. Part No.:: IRLB8721PBF
Brand:: Infineon

Infineon HEXFET N-Channel MOSFET, 62 A, 30 V, 3-Pin TO-220AB IRLB8721PBF

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£4.20

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£5.05

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In Stock

1,730 unit(s) ready to ship
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Plus 85 unit(s) shipping from 08 September 2025

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Units	Per unit	Per Pack*
5 - 45	£0.84	£4.20
50 - 120	£0.798	£3.99
125 - 245	£0.706	£3.53
250 - 495	£0.664	£3.32
500 +	£0.614	£3.07

*price indicative

RS Stock No.:: 725-9322
Mfr. Part No.:: IRLB8721PBF
Brand:: Infineon

Infineon HEXFET Series MOSFET, 30V Maximum Drain Source Voltage, 62A Maximum Continuous Drain Current - IRLB8721PBF

This MOSFET is a high-performance switching device tailored for various applications in electronics and automation. With a robust TO-220AB package, it features a continuous drain current capacity of 62A and can handle a maximum drain-source voltage of 30V. The device operates efficiently across a wide temperature range from -55°C to +175°C, making it suitable for demanding environments.

Features & Benefits

• Supports high frequency synchronous buck converters
• Engineered for high current use efficiently
• Fully characterised for avalanche voltage and current
• Minimal gate charge enhances switching performance
• Versatile mounting options simplify integration into designs

Applications

• Used in UPS and inverter systems
• Effective in high-frequency isolated DC-DC converters
• Suitable for synchronous rectification in industrial solutions
• Key component in computer processor power supplies

What is the significance of the device's low Rds(on)?

The low Rds(on) significantly lowers conduction losses, improving overall efficiency in power conversion applications, which is crucial for maintaining performance in high current operations.

How does the maximum gate threshold voltage affect device performance?

The gate threshold voltage range of 1.35V to 2.35V ensures the device can be reliably controlled in various applications, providing flexibility in integration with different drive circuits.

What considerations should be made for thermal management in applications?

Given the maximum power dissipation of 65W, appropriate thermal management strategies must be implemented, such as using a suitable heatsink, to prevent overheating and ensure reliable operation.

Can this MOSFET be used in automotive applications?

Yes, it is designed to operate effectively in high-temperature environments, making it suitable for automotive applications where thermal variability is a concern.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	62 A
	Maximum Drain Source Voltage	30 V
	Series	HEXFET
	Package Type	TO-220AB
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	9 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2.35V
	Minimum Gate Threshold Voltage	1.35V
	Maximum Power Dissipation	65 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Width	4.83mm
	Typical Gate Charge @ Vgs	7.6 nC @ 4.5 V
	Maximum Operating Temperature	+175 °C
	Length	10.67mm
	Number of Elements per Chip	1
	Transistor Material	Si
	Minimum Operating Temperature	-55 °C
	Forward Diode Voltage	1V
	Height	9.02mm

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 62 A
	Maximum Drain Source Voltage 30 V
	Series HEXFET
	Package Type TO-220AB
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 9 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2.35V
	Minimum Gate Threshold Voltage 1.35V
	Maximum Power Dissipation 65 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Width 4.83mm
	Typical Gate Charge @ Vgs 7.6 nC @ 4.5 V
	Maximum Operating Temperature +175 °C
	Length 10.67mm
	Number of Elements per Chip 1
	Transistor Material Si
	Minimum Operating Temperature -55 °C
	Forward Diode Voltage 1V
	Height 9.02mm

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