Infineon HEXFET N-Channel MOSFET, 62 A, 30 V, 3-Pin TO-220AB IRLB8721PBF

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£32.60

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£39.10

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100 - 200£0.483£24.15
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RS Stock No.:
913-4036
Mfr. Part No.:
IRLB8721PBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

62 A

Maximum Drain Source Voltage

30 V

Series

HEXFET

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.35V

Minimum Gate Threshold Voltage

1.35V

Maximum Power Dissipation

65 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

7.6 nC @ 4.5 V

Length

10.67mm

Number of Elements per Chip

1

Width

4.83mm

Height

9.02mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
MX

Infineon HEXFET Series MOSFET, 30V Maximum Drain Source Voltage, 62A Maximum Continuous Drain Current - IRLB8721PBF


This MOSFET is a high-performance switching device tailored for various applications in electronics and automation. With a robust TO-220AB package, it features a continuous drain current capacity of 62A and can handle a maximum drain-source voltage of 30V. The device operates efficiently across a wide temperature range from -55°C to +175°C, making it suitable for demanding environments.

Features & Benefits


• Supports high frequency synchronous buck converters
• Engineered for high current use efficiently
• Fully characterised for avalanche voltage and current
• Minimal gate charge enhances switching performance
• Versatile mounting options simplify integration into designs

Applications


• Used in UPS and inverter systems
• Effective in high-frequency isolated DC-DC converters
• Suitable for synchronous rectification in industrial solutions
• Key component in computer processor power supplies

What is the significance of the device's low Rds(on)?


The low Rds(on) significantly lowers conduction losses, improving overall efficiency in power conversion applications, which is crucial for maintaining performance in high current operations.

How does the maximum gate threshold voltage affect device performance?


The gate threshold voltage range of 1.35V to 2.35V ensures the device can be reliably controlled in various applications, providing flexibility in integration with different drive circuits.

What considerations should be made for thermal management in applications?


Given the maximum power dissipation of 65W, appropriate thermal management strategies must be implemented, such as using a suitable heatsink, to prevent overheating and ensure reliable operation.

Can this MOSFET be used in automotive applications?


Yes, it is designed to operate effectively in high-temperature environments, making it suitable for automotive applications where thermal variability is a concern.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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