Infineon HEXFET N-Channel MOSFET, 62 A, 30 V, 3-Pin TO-220AB IRLB8721PBF
- RS Stock No.:
- 913-4036
- Mfr. Part No.:
- IRLB8721PBF
- Brand:
- Infineon
Subtotal (1 tube of 50 units)*
£32.60
(exc. VAT)
£39.10
(inc. VAT)
FREE delivery for orders over £50.00
- 150 left, ready to ship
- Final 50 unit(s) shipping from 09 October 2025
Units | Per unit | Per Tube* |
---|---|---|
50 - 50 | £0.652 | £32.60 |
100 - 200 | £0.483 | £24.15 |
250 - 450 | £0.45 | £22.50 |
500 - 1200 | £0.418 | £20.90 |
1250 + | £0.385 | £19.25 |
*price indicative
- RS Stock No.:
- 913-4036
- Mfr. Part No.:
- IRLB8721PBF
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 62 A | |
Maximum Drain Source Voltage | 30 V | |
Series | HEXFET | |
Package Type | TO-220AB | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 9 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 2.35V | |
Minimum Gate Threshold Voltage | 1.35V | |
Maximum Power Dissipation | 65 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Transistor Material | Si | |
Maximum Operating Temperature | +175 °C | |
Typical Gate Charge @ Vgs | 7.6 nC @ 4.5 V | |
Length | 10.67mm | |
Number of Elements per Chip | 1 | |
Width | 4.83mm | |
Height | 9.02mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 62 A | ||
Maximum Drain Source Voltage 30 V | ||
Series HEXFET | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 9 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.35V | ||
Minimum Gate Threshold Voltage 1.35V | ||
Maximum Power Dissipation 65 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 7.6 nC @ 4.5 V | ||
Length 10.67mm | ||
Number of Elements per Chip 1 | ||
Width 4.83mm | ||
Height 9.02mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- MX
Infineon HEXFET Series MOSFET, 30V Maximum Drain Source Voltage, 62A Maximum Continuous Drain Current - IRLB8721PBF
Features & Benefits
• Engineered for high current use efficiently
• Fully characterised for avalanche voltage and current
• Minimal gate charge enhances switching performance
• Versatile mounting options simplify integration into designs
Applications
• Effective in high-frequency isolated DC-DC converters
• Suitable for synchronous rectification in industrial solutions
• Key component in computer processor power supplies
What is the significance of the device's low Rds(on)?
How does the maximum gate threshold voltage affect device performance?
What considerations should be made for thermal management in applications?
Can this MOSFET be used in automotive applications?
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