Infineon HEXFET N-Channel MOSFET, 171 A, 30 V, 3-Pin TO-220AB IRLB8314PBF
- RS Stock No.:
- 168-6028
- Mfr. Part No.:
- IRLB8314PBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 50 units)*
£33.70
(exc. VAT)
£40.45
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 950 unit(s) shipping from 03 November 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | £0.674 | £33.70 |
| 100 - 200 | £0.526 | £26.30 |
| 250 - 450 | £0.506 | £25.30 |
| 500 - 1200 | £0.479 | £23.95 |
| 1250 + | £0.425 | £21.25 |
*price indicative
- RS Stock No.:
- 168-6028
- Mfr. Part No.:
- IRLB8314PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 171 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | TO-220AB | |
| Series | HEXFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 3.2 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.2V | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 125 W | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 40 nC @ 4.5 V | |
| Length | 10.67mm | |
| Width | 4.83mm | |
| Maximum Operating Temperature | +175 °C | |
| Height | 16.51mm | |
| Forward Diode Voltage | 1V | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 171 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type TO-220AB | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 3.2 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.2V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 125 W | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 40 nC @ 4.5 V | ||
Length 10.67mm | ||
Width 4.83mm | ||
Maximum Operating Temperature +175 °C | ||
Height 16.51mm | ||
Forward Diode Voltage 1V | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
N-Channel Power MOSFET 30V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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