Infineon HEXFET N-Channel MOSFET, 171 A, 150 V, 3-Pin TO-247AC IRFP4568PBF

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Packaging Options:
RS Stock No.:
688-7018
Distrelec Article No.:
302-84-053
Mfr. Part No.:
IRFP4568PBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

171 A

Maximum Drain Source Voltage

150 V

Package Type

TO-247AC

Series

HEXFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

517 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+175 °C

Length

15.87mm

Typical Gate Charge @ Vgs

151 nC @ 10 V

Width

5.31mm

Transistor Material

Si

Number of Elements per Chip

1

Height

20.7mm

Minimum Operating Temperature

-55 °C

Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon


Motor Control MOSFET


Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications.

Synchronous Rectifier MOSFET


A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.

Infineon HEXFET Series MOSFET, 171A Maximum Continuous Drain Current, 517W Maximum Power Dissipation - IRFP4568PBF


This N-channel MOSFET is designed for high efficiency and consistent performance across various electronic circuits. Its robust features cater to power management and switching applications. The TO-247AC package facilitates effective thermal management and simplifies installation in through-hole configurations.

Features & Benefits


• Enhanced body diode recovery characteristics improve reliability
• Low on-resistance minimises power losses during operation
• Maximum power dissipation capability of 517 W accommodates high-demand application.
• Wide operating temperature range of -55°C to +175°C ensures functionality in diverse environment.
• Excellent gate threshold voltages optimise performance during switching actions.
• Single transistor configuration streamlines circuit designs for ease of use

Applications


• High-efficiency synchronous rectification
• Uninterruptible power supplies for dependable backup
• High-speed power switching circuits
• Suitable for hard-switched and high-frequency

What is the maximum continuous drain current this device can support?


The device supports a maximum continuous drain current of 171 A under optimal conditions.

How does the device manage heat during operation?


With a maximum power dissipation of 517W, the device effectively handles heat generated during operation.

What are the typical gate charge requirements?


The typical gate charge is approximately 151 nC at a gate-to-source voltage of 10 V, ensuring efficient switching performance.

Can it withstand extreme temperature variations?


Yes, it operates within a temperature range of -55°C to +175°C, making it suitable for various environmental conditions.

Is it suitable for synchronous rectification applications?


Yes, its design promotes high efficiency, making it ideal for synchronous rectification within power supply designs.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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