Infineon HEXFET N-Channel MOSFET, 171 A, 150 V, 3-Pin TO-247AC IRFP4568PBF

RS Stock No.:: 124-9020
Mfr. Part No.:: IRFP4568PBF
Brand:: Infineon

Infineon HEXFET N-Channel MOSFET, 171 A, 150 V, 3-Pin TO-247AC IRFP4568PBF

Currently unavailable

We don't know if this item will be back in stock, RS intend to remove it from our range soon.

RS Stock No.:: 124-9020
Mfr. Part No.:: IRFP4568PBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	171 A
	Maximum Drain Source Voltage	150 V
	Package Type	TO-247AC
	Series	HEXFET
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	6 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	5V
	Minimum Gate Threshold Voltage	3V
	Maximum Power Dissipation	517 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-30 V, +30 V
	Typical Gate Charge @ Vgs	151 nC @ 10 V
	Maximum Operating Temperature	+175 °C
	Length	15.87mm
	Number of Elements per Chip	1
	Transistor Material	Si
	Width	5.31mm
	Height	20.7mm
	Minimum Operating Temperature	-55 °C
	Forward Diode Voltage	1.3V

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 171 A
	Maximum Drain Source Voltage 150 V
	Package Type TO-247AC
	Series HEXFET
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 6 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 5V
	Minimum Gate Threshold Voltage 3V
	Maximum Power Dissipation 517 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -30 V, +30 V
	Typical Gate Charge @ Vgs 151 nC @ 10 V
	Maximum Operating Temperature +175 °C
	Length 15.87mm
	Number of Elements per Chip 1
	Transistor Material Si
	Width 5.31mm
	Height 20.7mm
	Minimum Operating Temperature -55 °C
	Forward Diode Voltage 1.3V

COO (Country of Origin):: MX

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Infineon HEXFET Series MOSFET, 171A Maximum Continuous Drain Current, 517W Maximum Power Dissipation - IRFP4568PBF

This N-channel MOSFET is designed for high efficiency and consistent performance across various electronic circuits. Its robust features cater to power management and switching applications. The TO-247AC package facilitates effective thermal management and simplifies installation in through-hole configurations.

Features & Benefits

• Enhanced body diode recovery characteristics improve reliability
• Low on-resistance minimises power losses during operation
• Maximum power dissipation capability of 517 W accommodates high-demand application.
• Wide operating temperature range of -55°C to +175°C ensures functionality in diverse environment.
• Excellent gate threshold voltages optimise performance during switching actions.
• Single transistor configuration streamlines circuit designs for ease of use

Applications

• High-efficiency synchronous rectification
• Uninterruptible power supplies for dependable backup
• High-speed power switching circuits
• Suitable for hard-switched and high-frequency

What is the maximum continuous drain current this device can support?

The device supports a maximum continuous drain current of 171 A under optimal conditions.

How does the device manage heat during operation?

With a maximum power dissipation of 517W, the device effectively handles heat generated during operation.

What are the typical gate charge requirements?

The typical gate charge is approximately 151 nC at a gate-to-source voltage of 10 V, ensuring efficient switching performance.

Can it withstand extreme temperature variations?

Yes, it operates within a temperature range of -55°C to +175°C, making it suitable for various environmental conditions.

Is it suitable for synchronous rectification applications?

Yes, its design promotes high efficiency, making it ideal for synchronous rectification within power supply designs.

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