Name: Infineon HEXFET N-Channel MOSFET, 171 A, 150 V, 3-Pin TO-247AC IRFP4568PBF
Brand: Infineon
SKU: 124-9020
Price: 6.15 GBP
Availability: Discontinued

Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon

Motor Control MOSFET

Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications.

Synchronous Rectifier MOSFET

A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.

Infineon HEXFET Series MOSFET, 171A Maximum Continuous Drain Current, 517W Maximum Power Dissipation - IRFP4568PBF

This N-channel MOSFET is designed for high efficiency and consistent performance across various electronic circuits. Its robust features cater to power management and switching applications. The TO-247AC package facilitates effective thermal management and simplifies installation in through-hole configurations.

Features & Benefits

• Enhanced body diode recovery characteristics improve reliability
• Low on-resistance minimises power losses during operation
• Maximum power dissipation capability of 517 W accommodates high-demand application.
• Wide operating temperature range of -55°C to +175°C ensures functionality in diverse environment.
• Excellent gate threshold voltages optimise performance during switching actions.
• Single transistor configuration streamlines circuit designs for ease of use

Applications

• High-efficiency synchronous rectification
• Uninterruptible power supplies for dependable backup
• High-speed power switching circuits
• Suitable for hard-switched and high-frequency

What is the maximum continuous drain current this device can support?

The device supports a maximum continuous drain current of 171 A under optimal conditions.

How does the device manage heat during operation?

With a maximum power dissipation of 517W, the device effectively handles heat generated during operation.

What are the typical gate charge requirements?

The typical gate charge is approximately 151 nC at a gate-to-source voltage of 10 V, ensuring efficient switching performance.

Can it withstand extreme temperature variations?

Yes, it operates within a temperature range of -55°C to +175°C, making it suitable for various environmental conditions.

Is it suitable for synchronous rectification applications?

Yes, its design promotes high efficiency, making it ideal for synchronous rectification within power supply designs.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	171 A
	Maximum Drain Source Voltage	150 V
	Series	HEXFET
	Package Type	TO-247AC
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	6 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	5V
	Minimum Gate Threshold Voltage	3V
	Maximum Power Dissipation	517 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-30 V, +30 V
	Typical Gate Charge @ Vgs	151 nC @ 10 V
	Maximum Operating Temperature	+175 °C
	Number of Elements per Chip	1
	Length	15.87mm
	Transistor Material	Si
	Width	5.31mm
	Minimum Operating Temperature	-55 °C
	Height	20.7mm
	Forward Diode Voltage	1.3V

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 171 A
	Maximum Drain Source Voltage 150 V
	Series HEXFET
	Package Type TO-247AC
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 6 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 5V
	Minimum Gate Threshold Voltage 3V
	Maximum Power Dissipation 517 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -30 V, +30 V
	Typical Gate Charge @ Vgs 151 nC @ 10 V
	Maximum Operating Temperature +175 °C
	Number of Elements per Chip 1
	Length 15.87mm
	Transistor Material Si
	Width 5.31mm
	Minimum Operating Temperature -55 °C
	Height 20.7mm
	Forward Diode Voltage 1.3V

Infineon HEXFET N-Channel MOSFET, 171 A, 150 V, 3-Pin TO-247AC IRFP4568PBF