MPN

Infineon HEXFET Type N-Channel MOSFET & Diode, 62 A, 55 V Enhancement, 3-Pin TO-252

RS Stock No.:: 220-7346
Mfr. Part No.:: AUIRFR48ZTRL
Brand:: Infineon

Infineon HEXFET Type N-Channel MOSFET & Diode, 62 A, 55 V Enhancement, 3-Pin TO-252

Subtotal (1 reel of 3000 units)*

£3,210.00

(exc. VAT)

£3,840.00

(inc. VAT)

FREE delivery for orders over £50.00

Temporarily out of stock

Shipping from 30 March 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Reel*
3000 +	£1.07	£3,210.00

*price indicative

RS Stock No.:: 220-7346
Mfr. Part No.:: AUIRFR48ZTRL
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET & Diode
	Channel Type	Type N
	Maximum Continuous Drain Current Id	62A
	Maximum Drain Source Voltage Vds	55V
	Package Type	TO-252
	Series	HEXFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	11mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	40nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	91W
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Height	2.39mm
	Standards/Approvals	No
	Width	6.73 mm
	Length	6.22mm
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Product Type MOSFET & Diode
	Channel Type Type N
	Maximum Continuous Drain Current Id 62A
	Maximum Drain Source Voltage Vds 55V
	Package Type TO-252
	Series HEXFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 11mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 40nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 91W
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Height 2.39mm
	Standards/Approvals No
	Width 6.73 mm
	Length 6.22mm
	Automotive Standard AEC-Q101

Datasheet - AUIRFR48ZTRL

The Infineon AUIRFR48ZTRL specifically designed for automotive applications, this HEXFET power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. It is use in Automotive applications and a wide variety of other applications.

Advanced Process Technology

Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax