Infineon HEXFET N-Channel MOSFET, 28 A, 55 V, 3-Pin DPAK IRLR2705TRPBF

Save 10% when you buy 6000 units

Subtotal (1 reel of 2000 units)*

£476.00

(exc. VAT)

£572.00

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 2,000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
2000 - 2000£0.238£476.00
4000 - 4000£0.226£452.00
6000 +£0.212£424.00

*price indicative

Alternative

This product is not currently available. Here is our alternative recommendation.

Each (In a Pack of 20)

£0.566

(exc. VAT)

£0.679

(inc. VAT)

RS Stock No.:
913-4809
Mfr. Part No.:
IRLR2705TRPBF
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

28 A

Maximum Drain Source Voltage

55 V

Package Type

DPAK (TO-252)

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

65 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

68 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

25 nC @ 5 V

Length

6.73mm

Transistor Material

Si

Width

6.22mm

Height

2.39mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
CN

N-Channel Power MOSFET 55V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 28A Maximum Continuous Drain Current, 68W Maximum Power Dissipation - IRLR2705TRPBF


This MOSFET is engineered for outstanding performance across a range of electronic applications. Leveraging modern advancements in MOSFET technology, it plays a significant role in switching applications where efficiency and dependability are essential. Its distinct features make it an excellent option for automation and electrical systems that require high current handling and robust operation.

Features & Benefits


• High continuous drain current of 28A improves performance
• Maximum voltage rating of 55V boosts switching capabilities
• Low on-resistance of 65mΩ minimises energy loss
• Operates effectively at temperatures up to +175°C
• Designed for surface mounting in a DPAK TO-252 package for efficiency
• Single enhancement mode configuration facilitates circuit design

Applications


• Suitable for power management in industrial automation
• Ideal for energy-efficient switching in power supplies
• Commonly utilised in motor control circuits
• Appropriate for use in DC-DC converters

What is the maximum power dissipation for this component?


The maximum power dissipation is 68W, allowing for efficient heat management during operation.

How does the operating temperature range affect usage?


The device operates effectively between -55°C and +175°C, making it suitable for various environmental conditions.

Is there a specific installation method recommended for this MOSFET?


The device is designed for surface mounting using techniques like soldering to ensure reliable connections.

Can this MOSFET be used in parallel with others?


Yes, it can be used in parallel configurations, but proper thermal management is essential to prevent overheating.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Related links