MPN

Infineon HEXFET N-Channel MOSFET, 28 A, 55 V, 3-Pin DPAK IRLR2705TRPBF

RS Stock No.:: 830-3348
Mfr. Part No.:: IRLR2705TRPBF
Brand:: Infineon

Infineon HEXFET N-Channel MOSFET, 28 A, 55 V, 3-Pin DPAK IRLR2705TRPBF

Bulk discount available

Subtotal (1 pack of 20 units)*

£10.84

(exc. VAT)

£13.00

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

Plus 100 unit(s) shipping from 08 September 2025
Plus 100 unit(s) shipping from 08 September 2025
Plus 2,140 unit(s) shipping from 15 September 2025

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Units	Per unit	Per Pack*
20 - 80	£0.542	£10.84
100 - 180	£0.418	£8.36
200 - 480	£0.39	£7.80
500 - 980	£0.363	£7.26
1000 +	£0.336	£6.72

*price indicative

RS Stock No.:: 830-3348
Mfr. Part No.:: IRLR2705TRPBF
Brand:: Infineon

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	28 A
	Maximum Drain Source Voltage	55 V
	Package Type	DPAK (TO-252)
	Series	HEXFET
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	65 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2V
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	68 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-16 V, +16 V
	Number of Elements per Chip	1
	Length	6.73mm
	Typical Gate Charge @ Vgs	25 nC @ 5 V
	Transistor Material	Si
	Width	6.22mm
	Maximum Operating Temperature	+175 °C
	Minimum Operating Temperature	-55 °C
	Height	2.39mm
	Forward Diode Voltage	1.3V

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 28 A
	Maximum Drain Source Voltage 55 V
	Package Type DPAK (TO-252)
	Series HEXFET
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 65 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2V
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 68 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -16 V, +16 V
	Number of Elements per Chip 1
	Length 6.73mm
	Typical Gate Charge @ Vgs 25 nC @ 5 V
	Transistor Material Si
	Width 6.22mm
	Maximum Operating Temperature +175 °C
	Minimum Operating Temperature -55 °C
	Height 2.39mm
	Forward Diode Voltage 1.3V

N-Channel Power MOSFET 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 28A Maximum Continuous Drain Current, 68W Maximum Power Dissipation - IRLR2705TRPBF

This MOSFET is engineered for outstanding performance across a range of electronic applications. Leveraging modern advancements in MOSFET technology, it plays a significant role in switching applications where efficiency and dependability are essential. Its distinct features make it an excellent option for automation and electrical systems that require high current handling and robust operation.

Features & Benefits

• High continuous drain current of 28A improves performance
• Maximum voltage rating of 55V boosts switching capabilities
• Low on-resistance of 65mΩ minimises energy loss
• Operates effectively at temperatures up to +175°C
• Designed for surface mounting in a DPAK TO-252 package for efficiency
• Single enhancement mode configuration facilitates circuit design

Applications

• Suitable for power management in industrial automation
• Ideal for energy-efficient switching in power supplies
• Commonly utilised in motor control circuits
• Appropriate for use in DC-DC converters

What is the maximum power dissipation for this component?

The maximum power dissipation is 68W, allowing for efficient heat management during operation.

How does the operating temperature range affect usage?

The device operates effectively between -55°C and +175°C, making it suitable for various environmental conditions.

Is there a specific installation method recommended for this MOSFET?

The device is designed for surface mounting using techniques like soldering to ensure reliable connections.

Can this MOSFET be used in parallel with others?

Yes, it can be used in parallel configurations, but proper thermal management is essential to prevent overheating.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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