Infineon HEXFET Silicon N-Channel MOSFET, 56 A, 55 V, 3-Pin DPAK IRFR2405TRPBF
- RS Stock No.:
- 222-4750
- Mfr. Part No.:
- IRFR2405TRPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 reel of 2000 units)*
£900.00
(exc. VAT)
£1,080.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 999,998,000 unit(s) shipping from 18 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2000 - 2000 | £0.45 | £900.00 |
| 4000 + | £0.428 | £856.00 |
*price indicative
- RS Stock No.:
- 222-4750
- Mfr. Part No.:
- IRFR2405TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 56 A | |
| Maximum Drain Source Voltage | 55 V | |
| Series | HEXFET | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 16 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Transistor Material | Silicon | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 56 A | ||
Maximum Drain Source Voltage 55 V | ||
Series HEXFET | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 16 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Transistor Material Silicon | ||
Number of Elements per Chip 1 | ||
The Infineon design of HEXFET® Power MOSFETs from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Advanced Process Technology
Dynamic dv/dt Rating
Fast Switching
Fully Avalanche Rated
Dynamic dv/dt Rating
Fast Switching
Fully Avalanche Rated
Related links
- Infineon HEXFET Silicon N-Channel MOSFET 55 V, 3-Pin DPAK IRFR2405TRPBF
- Infineon HEXFET N-Channel MOSFET 55 V DPAK IRFR2405TRLPBF
- Infineon HEXFET Silicon N-Channel MOSFET 55 V, 3-Pin DPAK AUIRFR9024NTRL
- Infineon HEXFET Silicon N-Channel MOSFET 200 V, 3-Pin TO-220AB IRFB260NPBF
- Infineon HEXFET Dual Silicon N-Channel MOSFET 100 V, 3-Pin IPAK IRFU4510PBF
- Infineon HEXFET N-Channel MOSFET 30 V, 3-Pin DPAK IRFR3707ZTRPBF
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin DPAK IRFR3710ZTRLPBF
- Infineon HEXFET Silicon N-Channel MOSFET 55 V, 3-Pin D2PAK IRF3205ZSTRLPBF