Infineon HEXFET Silicon N-Channel MOSFET, 56 A, 200 V, 3-Pin TO-220AB IRFB260NPBF

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Subtotal (1 tube of 1000 units)*

£898.00

(exc. VAT)

£1,078.00

(inc. VAT)

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Units
Per unit
Per Tube*
1000 +£0.898£898.00

*price indicative

RS Stock No.:
262-6745
Mfr. Part No.:
IRFB260NPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

56 A

Maximum Drain Source Voltage

200 V

Package Type

TO-220AB

Series

HEXFET

Mounting Type

Through Hole

Pin Count

3

Channel Mode

Enhancement

Transistor Material

Silicon

Number of Elements per Chip

1

The Infineon power MOSFET has low gate to drain charge to reduce switching losses. It is suitable for use with high frequency DC-DC converters.

Fully characterized avalanche voltage and current

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