Infineon HEXFET N-Channel MOSFET, 65 A, 200 V, 3-Pin TO-220AB IRFB4227PBF

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Subtotal (1 tube of 50 units)*

£93.20

(exc. VAT)

£111.85

(inc. VAT)

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Units
Per unit
Per Tube*
50 - 50£1.864£93.20
100 - 200£1.715£85.75
250 +£1.622£81.10

*price indicative

RS Stock No.:
913-3932
Mfr. Part No.:
IRFB4227PBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

65 A

Maximum Drain Source Voltage

200 V

Package Type

TO-220AB

Series

HEXFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

24 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

330 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.66mm

Typical Gate Charge @ Vgs

70 nC @ 10 V

Transistor Material

Si

Width

4.82mm

Height

9.02mm

Minimum Operating Temperature

-40 °C

COO (Country of Origin):
CN

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