Infineon HEXFET Type N-Channel MOSFET, 200 A, 40 V Enhancement, 3-Pin TO-220

RS Stock No.:: 145-9602
Mfr. Part No.:: IRL1404ZPBF
Brand:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 200 A, 40 V Enhancement, 3-Pin TO-220

Bulk discount available

Subtotal (1 tube of 50 units)*

£79.60

(exc. VAT)

£95.50

(inc. VAT)

FREE delivery for orders over £50.00

Last RS stock

Final 150 unit(s), ready to ship

Units	Per unit	Per Tube*
50 - 50	£1.592	£79.60
100 - 200	£1.258	£62.90
250 - 450	£1.178	£58.90
500 - 950	£1.099	£54.95
1000 +	£1.019	£50.95

*price indicative

RS Stock No.:: 145-9602
Mfr. Part No.:: IRL1404ZPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	200A
	Maximum Drain Source Voltage Vds	40V
	Series	HEXFET
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	3mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	75nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	16 V
	Maximum Power Dissipation Pd	230W
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Width	4.4 mm
	Height	8.77mm
	Standards/Approvals	No
	Length	10.66mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 200A
	Maximum Drain Source Voltage Vds 40V
	Series HEXFET
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 3mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 75nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 16 V
	Maximum Power Dissipation Pd 230W
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Width 4.4 mm
	Height 8.77mm
	Standards/Approvals No
	Length 10.66mm
	Automotive Standard No

RoHS Status: Exempt

Infineon HEXFET Series MOSFET, 200A Maximum Continuous Drain Current, 230W Maximum Power Dissipation - IRL1404ZPBF

This MOSFET is engineered for high-efficiency performance across various applications, particularly within automation, electronics, and electrical engineering. It ensures dependable operation in extreme conditions, which is Crucial for Advanced electronic systems. Its robust design makes it a preferred option for engineers seeking to optimise power management solutions.

Features & Benefits

• Capable of handling continuous drain currents up to 200A

• Low drain-source on-resistance enhances efficiency

• Suitable for high switching speeds to reduce energy losses

• Operates within a wide temperature range from -55°C to +175°C

• Offers a maximum gate threshold voltage of 2.7V for compatibility

• Designed in a through-hole TO-220 package for simple mounting

Applications

• Used in power amplifiers and converters

• Employed in DC-DC switching power supplies

• Integrated within motor control circuitry

• Ideal for automotive and renewable energy

What is the maximum voltage this component can handle?

It can manage a maximum drain-source voltage of 40V.

How does the gate threshold voltage affect operation?

A gate threshold voltage of 2.7V ensures efficient activation of the device, allowing for accurate control.

Can this component be used in high-temperature environments?

Yes, it is rated for operation up to +175°C, making it suitable for intense applications.

What is the significance of low drain-source resistance?

Low resistance minimises power losses, thereby enhancing overall system efficiency, especially at high current loads.

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