Infineon HEXFET Type N-Channel MOSFET, 9.3 A, 200 V Enhancement, 3-Pin TO-220

RS Stock No.:: 919-5025
Mfr. Part No.:: IRF630NPBF
Brand:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 9.3 A, 200 V Enhancement, 3-Pin TO-220

Bulk discount available

Subtotal (1 tube of 50 units)*

£34.05

(exc. VAT)

£40.85

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

Plus 250 unit(s) shipping from 29 December 2025
Plus 550 unit(s) shipping from 05 January 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Tube*
50 - 50	£0.681	£34.05
100 - 200	£0.538	£26.90
250 - 450	£0.504	£25.20
500 - 1200	£0.47	£23.50
1250 +	£0.436	£21.80

*price indicative

RS Stock No.:: 919-5025
Mfr. Part No.:: IRF630NPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	9.3A
	Maximum Drain Source Voltage Vds	200V
	Package Type	TO-220
	Series	HEXFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	300mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	82W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	35nC
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Width	4.69 mm
	Length	10.54mm
	Height	8.77mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 9.3A
	Maximum Drain Source Voltage Vds 200V
	Package Type TO-220
	Series HEXFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 300mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 82W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 35nC
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Width 4.69 mm
	Length 10.54mm
	Height 8.77mm
	Automotive Standard No

Infineon HEXFET Series MOSFET, 9.3A Maximum Continuous Drain Current, 82W Maximum Power Dissipation - IRF630NPBF

This N-channel MOSFET is designed for a range of applications in the automation and electronics sectors. It offers optimal power dissipation capabilities and efficient performance, crucial for high-performance systems. With a maximum drain-source voltage of 200V and a continuous drain current of 9.3A, it ensures dependable operation in challenging electronic environments.

Features & Benefits

• High power rating supports extensive electrical applications

• Efficient design lowers thermal resistance for effective cooling

• Fast switching speeds improve performance in dynamic systems

• Simple drive requirements aid in circuit integration

• Fully avalanche rated, making it suitable for rugged conditions

Applications

• Utilised in industrial power supplies to maintain stable voltage regulation

• Employed in motor control systems for efficient functionality

• Ideal for DC-DC converters and power management circuits

• Used in HVAC systems to control compressor motors

• Appropriate for renewable energy systems, enhancing power efficiency

What is the maximum gate-source voltage that can be applied?

The maximum gate-source voltage is ±20V, ensuring compatibility with various circuit designs.

How does the device handle thermal dissipation during operation?

It has a power dissipation capacity of 82W, allowing for efficient heat management while in use.

Is there a specific mounting type recommended for optimal performance?

The MOSFET is intended for through-hole mounting, which promotes reliable thermal management and electrical connectivity.

What type of applications benefit from its fast switching capabilities?

Applications requiring high-speed operation, like switching power supplies and compact converters, take advantage of its swift switching speeds.

Infineon Schottky Diodes & MOSFETs – Matched for Power, Built for Efficiency

Pair Infineon Schottky diodes with Infineon MOSFETs for a high-efficiency power solution that’s optimised from the ground up. Designed to work together, they deliver fast switching, low losses, and excellent thermal performance—ideal for SMPS, motor drives, and automotive systems. Reduce design complexity and boost reliability with components engineered for synergy.

Explore the Infineon range today