Infineon HEXFET N-Channel MOSFET, 9.3 A, 200 V, 3-Pin TO-220AB IRF630NPBF

RS Stock No.:: 919-5025
Mfr. Part No.:: IRF630NPBF
Brand:: Infineon

Infineon HEXFET N-Channel MOSFET, 9.3 A, 200 V, 3-Pin TO-220AB IRF630NPBF

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Subtotal (1 tube of 50 units)*

£34.05

(exc. VAT)

£40.85

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

Plus 300 unit(s) shipping from 06 October 2025
Plus 550 unit(s) shipping from 13 October 2025

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Units	Per unit	Per Tube*
50 - 50	£0.681	£34.05
100 - 200	£0.538	£26.90
250 - 450	£0.504	£25.20
500 - 1200	£0.47	£23.50
1250 +	£0.436	£21.80

*price indicative

RS Stock No.:: 919-5025
Mfr. Part No.:: IRF630NPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	9.3 A
	Maximum Drain Source Voltage	200 V
	Package Type	TO-220AB
	Series	HEXFET
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	300 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	82 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Number of Elements per Chip	1
	Length	10.54mm
	Typical Gate Charge @ Vgs	35 nC @ 10 V
	Maximum Operating Temperature	+175 °C
	Width	4.69mm
	Transistor Material	Si
	Height	8.77mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 9.3 A
	Maximum Drain Source Voltage 200 V
	Package Type TO-220AB
	Series HEXFET
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 300 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 82 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Number of Elements per Chip 1
	Length 10.54mm
	Typical Gate Charge @ Vgs 35 nC @ 10 V
	Maximum Operating Temperature +175 °C
	Width 4.69mm
	Transistor Material Si
	Height 8.77mm
	Minimum Operating Temperature -55 °C

N-Channel Power MOSFET 150V to 600V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 9.3A Maximum Continuous Drain Current, 82W Maximum Power Dissipation - IRF630NPBF

This N-channel MOSFET is designed for a range of applications in the automation and electronics sectors. It offers optimal power dissipation capabilities and efficient performance, crucial for high-performance systems. With a maximum drain-source voltage of 200V and a continuous drain current of 9.3A, it ensures dependable operation in challenging electronic environments.

Features & Benefits

• High power rating supports extensive electrical applications
• Efficient design lowers thermal resistance for effective cooling
• Fast switching speeds improve performance in dynamic systems
• Simple drive requirements aid in circuit integration
• Fully avalanche rated, making it suitable for rugged conditions

Applications

• Utilised in industrial power supplies to maintain stable voltage regulation
• Employed in motor control systems for efficient functionality
• Ideal for DC-DC converters and power management circuits
• Used in HVAC systems to control compressor motors
• Appropriate for renewable energy systems, enhancing power efficiency

What is the maximum gate-source voltage that can be applied?

The maximum gate-source voltage is ±20V, ensuring compatibility with various circuit designs.

How does the device handle thermal dissipation during operation?

It has a power dissipation capacity of 82W, allowing for efficient heat management while in use.

Is there a specific mounting type recommended for optimal performance?

The MOSFET is intended for through-hole mounting, which promotes reliable thermal management and electrical connectivity.

What type of applications benefit from its fast switching capabilities?

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.