Infineon HEXFET N-Channel MOSFET, 9.3 A, 80 V, 8-Pin SOIC IRF7493TRPBF

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

9.3 A

Maximum Drain Source Voltage

80 V

Package Type

SOIC

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

15 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

5mm

Transistor Material

Si

Typical Gate Charge @ Vgs

35 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Width

4mm

Height

1.5mm

Forward Diode Voltage

1.3V

Minimum Operating Temperature

-55 °C