Infineon HEXFET N-Channel MOSFET, 13.6 A, 30 V, 8-Pin SOIC IRF7821TRPBF
- RS Stock No.:
- 915-4963
- Mfr. Part No.:
- IRF7821TRPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 20 units)*
£12.42
(exc. VAT)
£14.90
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 2,680 unit(s) shipping from 12 September 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | £0.621 | £12.42 |
| 100 - 380 | £0.474 | £9.48 |
| 400 - 980 | £0.45 | £9.00 |
| 1000 + | £0.327 | £6.54 |
*price indicative
- RS Stock No.:
- 915-4963
- Mfr. Part No.:
- IRF7821TRPBF
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 13.6 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | SOIC | |
| Series | HEXFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 12.5 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 2.5 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 9.3 nC @ 4.5 V | |
| Transistor Material | Si | |
| Width | 4mm | |
| Maximum Operating Temperature | +155 °C | |
| Length | 5mm | |
| Number of Elements per Chip | 1 | |
| Forward Diode Voltage | 1V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.5mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 13.6 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOIC | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 12.5 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 2.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 9.3 nC @ 4.5 V | ||
Transistor Material Si | ||
Width 4mm | ||
Maximum Operating Temperature +155 °C | ||
Length 5mm | ||
Number of Elements per Chip 1 | ||
Forward Diode Voltage 1V | ||
Minimum Operating Temperature -55 °C | ||
Height 1.5mm | ||
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