N-Channel MOSFET, 12 A, 60 V, 8-Pin SOIC Infineon IRF7855TRPBF
- RS Stock No.:
- 165-5714
- Mfr. Part No.:
- IRF7855TRPBF
- Brand:
- Infineon
Subtotal (1 reel of 4000 units)**
£2,440.00
(exc. VAT)
£2,920.00
(inc. VAT)
4000 In stock - FREE next working day delivery available*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over £50.00
Units | Per unit | Per Reel** |
|---|---|---|
| 4000 + | £0.61 | £2,440.00 |
**price indicative
- RS Stock No.:
- 165-5714
- Mfr. Part No.:
- IRF7855TRPBF
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 12 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | SOIC | |
| Series | HEXFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 9.4 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.9V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 2.5 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 5mm | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 26 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Width | 4mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.5mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 12 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type SOIC | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 9.4 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.9V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 2.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +150 °C | ||
Length 5mm | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 26 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Width 4mm | ||
Minimum Operating Temperature -55 °C | ||
Height 1.5mm | ||
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