Infineon HEXFET Type N-Channel MOSFET, 2.4 A, 30 V Enhancement, 8-Pin SOIC IRF7503TRPBF

Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
Packaging Options:
RS Stock No.:
262-6740
Mfr. Part No.:
IRF7503TRPBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

2.4A

Maximum Drain Source Voltage Vds

30V

Series

HEXFET

Package Type

SOIC

Pin Count

8

Maximum Drain Source Resistance Rds

222mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

1.25W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

7.8nC

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

Distrelec Product Id

304-41-669

The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. It has smallest footprint which makes it ideal for applications for where printed circuit board space is at premium.

Ultra low resistance

Available in tape and reel

Very small SOIC package

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