Infineon HEXFET N-Channel MOSFET, 18 A, 40 V, 8-Pin SOIC IRF7842TRPBF

RS Stock No.:: 165-5716
Mfr. Part No.:: IRF7842TRPBF
Brand:: Infineon

Infineon HEXFET N-Channel MOSFET, 18 A, 40 V, 8-Pin SOIC IRF7842TRPBF

Subtotal (1 reel of 4000 units)*

£2,384.00

(exc. VAT)

£2,860.00

(inc. VAT)

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Shipping from 05 January 2026

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Units	Per unit	Per Reel*
4000 +	£0.596	£2,384.00

*price indicative

RS Stock No.:: 165-5716
Mfr. Part No.:: IRF7842TRPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	18 A
	Maximum Drain Source Voltage	40 V
	Package Type	SOIC
	Series	HEXFET
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	5.9 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2.25V
	Minimum Gate Threshold Voltage	1.35V
	Maximum Power Dissipation	2.5 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Maximum Operating Temperature	+150 °C
	Typical Gate Charge @ Vgs	33 nC @ 4.5 V
	Length	5mm
	Number of Elements per Chip	1
	Transistor Material	Si
	Width	4mm
	Height	1.5mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 18 A
	Maximum Drain Source Voltage 40 V
	Package Type SOIC
	Series HEXFET
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 5.9 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2.25V
	Minimum Gate Threshold Voltage 1.35V
	Maximum Power Dissipation 2.5 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Maximum Operating Temperature +150 °C
	Typical Gate Charge @ Vgs 33 nC @ 4.5 V
	Length 5mm
	Number of Elements per Chip 1
	Transistor Material Si
	Width 4mm
	Height 1.5mm
	Minimum Operating Temperature -55 °C

N-Channel Power MOSFET 40V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 18A Maximum Continuous Drain Current, 2.5W Maximum Power Dissipation - IRF7842TRPBF

This MOSFET delivers high performance in various electronic applications. With specifications including an 18A continuous drain current and a maximum drain-source voltage of 40V, it enhances power efficiency for electronic devices. Designed for surface mount technology, this device ensures durability and is suitable for professionals in electronics and automation.

Features & Benefits

• Low Rds(on) at 4.5V improves efficiency
• High current handling optimises power delivery
• Minimal gate charge reduces switching losses
• Avalanche rated to enhance reliability
• N-channel configuration supports effective performance in control applications

Applications

• Used in synchronous MOSFET circuits for notebook processor power
• Acts as secondary synchronous rectification in isolated DC-DC converters
• Functions in non-isolated DC-DC converter designs

What is the maximum operating temperature for this device?

It operates efficiently up to +150°C, ensuring reliability in high-temperature environments.

How does this component handle current during operation?

The device supports a continuous drain current of 18A, suitable for various applications.

Can it be used in high-voltage circuits?

Yes, the maximum drain-source voltage is rated at 40V, providing flexibility for high-voltage applications.

What are the thermal resistance characteristics?

The thermal resistance from junction-to-ambient is typically around 50-55°C/W, facilitating effective heat dissipation.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.