Infineon HEXFET N-Channel MOSFET, 20 A, 30 V, 8-Pin SOIC IRF7832TRPBF

Subtotal (1 pack of 10 units)*

£5.62

(exc. VAT)

£6.74

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 50 unit(s) ready to ship
  • Plus 4,600 unit(s) shipping from 09 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
10 +£0.562£5.62

*price indicative

Packaging Options:
RS Stock No.:
827-3896
Mfr. Part No.:
IRF7832TRPBF
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

30 V

Series

HEXFET

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

4.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.32V

Minimum Gate Threshold Voltage

1.39V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

34 nC @ 4.5 V

Maximum Operating Temperature

+155 °C

Number of Elements per Chip

1

Transistor Material

Si

Width

4mm

Length

5mm

Height

1.5mm

Minimum Operating Temperature

-55 °C

N-Channel Power MOSFET 30V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Related links