Infineon HEXFET N-Channel MOSFET, 20 A, 30 V, 8-Pin SOIC IRF7832TRPBF

Subtotal (1 reel of 4000 units)*

£1,456.00

(exc. VAT)

£1,748.00

(inc. VAT)

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4000 +£0.364£1,456.00

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RS Stock No.:
165-5715
Mfr. Part No.:
IRF7832TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

4.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.32V

Minimum Gate Threshold Voltage

1.39V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4mm

Number of Elements per Chip

1

Length

5mm

Typical Gate Charge @ Vgs

34 nC @ 4.5 V

Transistor Material

Si

Maximum Operating Temperature

+155 °C

Minimum Operating Temperature

-55 °C

Height

1.5mm

N-Channel Power MOSFET 30V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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