Infineon HEXFET N-Channel MOSFET, 20 A, 30 V, 8-Pin SOIC IRF7832TRPBF

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

4.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.32V

Minimum Gate Threshold Voltage

1.39V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4mm

Length

5mm

Typical Gate Charge @ Vgs

34 nC @ 4.5 V

Number of Elements per Chip

1

Maximum Operating Temperature

+155 °C

Transistor Material

Si

Height

1.5mm

Minimum Operating Temperature

-55 °C