Infineon HEXFET N-Channel MOSFET, 11 A, 30 V, 8-Pin SOIC IRF8707TRPBF

RS Stock No.:: 165-8214
Mfr. Part No.:: IRF8707TRPBF
Brand:: Infineon

Infineon HEXFET N-Channel MOSFET, 11 A, 30 V, 8-Pin SOIC IRF8707TRPBF

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We don't know if this item will be back in stock, RS intend to remove it from our range soon.

RS Stock No.:: 165-8214
Mfr. Part No.:: IRF8707TRPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	11 A
	Maximum Drain Source Voltage	30 V
	Series	HEXFET
	Package Type	SOIC
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	17.5 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2.35V
	Minimum Gate Threshold Voltage	1.35V
	Maximum Power Dissipation	2.5 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Number of Elements per Chip	1
	Length	5mm
	Typical Gate Charge @ Vgs	6.2 nC @ 4.5 V
	Maximum Operating Temperature	+150 °C
	Width	4mm
	Transistor Material	Si
	Forward Diode Voltage	1V
	Height	1.5mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 11 A
	Maximum Drain Source Voltage 30 V
	Series HEXFET
	Package Type SOIC
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 17.5 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2.35V
	Minimum Gate Threshold Voltage 1.35V
	Maximum Power Dissipation 2.5 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Number of Elements per Chip 1
	Length 5mm
	Typical Gate Charge @ Vgs 6.2 nC @ 4.5 V
	Maximum Operating Temperature +150 °C
	Width 4mm
	Transistor Material Si
	Forward Diode Voltage 1V
	Height 1.5mm
	Minimum Operating Temperature -55 °C

N-Channel Power MOSFET 30V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 11A Maximum Continuous Drain Current, 2.5W Maximum Power Dissipation - IRF8707TRPBF

This MOSFET is tailored for power applications, enhancing efficiency and thermal performance. Its low on-resistance and minimal gate charge significantly reduce both conduction and switching losses, making it well-suited for high-efficiency DC-DC converters across various applications. The compact SOIC package increases versatility and integrates easily into confined spaces.

Features & Benefits

• Low gate charge diminishes switching losses in applications
• Maximum continuous drain current of 11A boosts performance
• High temperature tolerance up to +150°C ensures reliability
• Low Rds(on) enhances overall power efficiency
• N-channel configuration allows flexible designs
• Fully characterised for avalanche voltage and current provides added security

Applications

• Control of MOSFETs in synchronous buck converters
• Use in isolated DC-DC converters for networking systems
• Power management solutions for notebook processors
• Implementation in automation and control systems for improved performance

What is the suitability for high-temperature environments?

The device operates effectively at temperatures up to +150°C, ensuring reliability in high-heat conditions typical of power applications.

How does this product manage power dissipation?

With a maximum power dissipation of 2.5W, it balances thermal performance, decreasing the risk of overheating.

Can it handle different voltage ratings?

Yes, it can withstand a maximum drain-source voltage of 30V, making it versatile for various applications.

What is the maximum gate threshold voltage?

The maximum gate threshold voltage is 2.35V, ensuring compatibility with a range of drive circuits.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.