Infineon HEXFET N-Channel MOSFET, 11 A, 30 V, 8-Pin SOIC IRF8707TRPBF
- RS Stock No.:
- 165-8214
- Mfr. Part No.:
- IRF8707TRPBF
- Brand:
- Infineon
- RS Stock No.:
- 165-8214
- Mfr. Part No.:
- IRF8707TRPBF
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 11 A | |
Maximum Drain Source Voltage | 30 V | |
Series | HEXFET | |
Package Type | SOIC | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 17.5 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 2.35V | |
Minimum Gate Threshold Voltage | 1.35V | |
Maximum Power Dissipation | 2.5 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Number of Elements per Chip | 1 | |
Typical Gate Charge @ Vgs | 6.2 nC @ 4.5 V | |
Length | 5mm | |
Maximum Operating Temperature | +150 °C | |
Transistor Material | Si | |
Width | 4mm | |
Height | 1.5mm | |
Minimum Operating Temperature | -55 °C | |
Forward Diode Voltage | 1V | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 11 A | ||
Maximum Drain Source Voltage 30 V | ||
Series HEXFET | ||
Package Type SOIC | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 17.5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.35V | ||
Minimum Gate Threshold Voltage 1.35V | ||
Maximum Power Dissipation 2.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 6.2 nC @ 4.5 V | ||
Length 5mm | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Width 4mm | ||
Height 1.5mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1V | ||
N-Channel Power MOSFET 30V, Infineon
Infineon HEXFET Series MOSFET, 11A Maximum Continuous Drain Current, 2.5W Maximum Power Dissipation - IRF8707TRPBF
Features & Benefits
• Maximum continuous drain current of 11A boosts performance
• High temperature tolerance up to +150°C ensures reliability
• Low Rds(on) enhances overall power efficiency
• N-channel configuration allows flexible designs
• Fully characterised for avalanche voltage and current provides added security
Applications
• Use in isolated DC-DC converters for networking systems
• Power management solutions for notebook processors
• Implementation in automation and control systems for improved performance
What is the suitability for high-temperature environments?
How does this product manage power dissipation?
Can it handle different voltage ratings?
What is the maximum gate threshold voltage?
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