Infineon HEXFET N-Channel MOSFET, 11 A, 30 V, 8-Pin SOIC IRF8707TRPBF

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£14.88

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£17.84

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Packaging Options:
RS Stock No.:
915-4976
Mfr. Part No.:
IRF8707TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

30 V

Series

HEXFET

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

17.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.35V

Minimum Gate Threshold Voltage

1.35V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

6.2 nC @ 4.5 V

Length

5mm

Number of Elements per Chip

1

Width

4mm

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1V

Minimum Operating Temperature

-55 °C

Height

1.5mm

N-Channel Power MOSFET 30V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 11A Maximum Continuous Drain Current, 2.5W Maximum Power Dissipation - IRF8707TRPBF


This MOSFET is tailored for power applications, enhancing efficiency and thermal performance. Its low on-resistance and minimal gate charge significantly reduce both conduction and switching losses, making it well-suited for high-efficiency DC-DC converters across various applications. The compact SOIC package increases versatility and integrates easily into confined spaces.

Features & Benefits


• Low gate charge diminishes switching losses in applications
• Maximum continuous drain current of 11A boosts performance
• High temperature tolerance up to +150°C ensures reliability
• Low Rds(on) enhances overall power efficiency
• N-channel configuration allows flexible designs
• Fully characterised for avalanche voltage and current provides added security

Applications


• Control of MOSFETs in synchronous buck converters
• Use in isolated DC-DC converters for networking systems
• Power management solutions for notebook processors
• Implementation in automation and control systems for improved performance

What is the suitability for high-temperature environments?


The device operates effectively at temperatures up to +150°C, ensuring reliability in high-heat conditions typical of power applications.

How does this product manage power dissipation?


With a maximum power dissipation of 2.5W, it balances thermal performance, decreasing the risk of overheating.

Can it handle different voltage ratings?


Yes, it can withstand a maximum drain-source voltage of 30V, making it versatile for various applications.

What is the maximum gate threshold voltage?


The maximum gate threshold voltage is 2.35V, ensuring compatibility with a range of drive circuits.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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