Infineon HEXFET N-Channel MOSFET, 12 A, 60 V, 8-Pin SOIC IRF7855TRPBF

Subtotal (1 pack of 10 units)*

£8.80

(exc. VAT)

£10.60

(inc. VAT)

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Packaging Options:
RS Stock No.:
827-3893
Mfr. Part No.:
IRF7855TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

60 V

Series

HEXFET

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

9.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.9V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

26 nC @ 10 V

Length

5mm

Number of Elements per Chip

1

Width

4mm

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.5mm

N-Channel Power MOSFET 60V to 80V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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