N-Channel MOSFET, 9.3 A, 200 V, 3-Pin TO-220AB Infineon IRF630NPBF

RS Stock No.:: 543-0068
Mfr. Part No.:: IRF630NPBF
Brand:: Infineon

N-Channel MOSFET, 9.3 A, 200 V, 3-Pin TO-220AB Infineon IRF630NPBF

78 In stock - FREE next working day delivery available

10 available from Europe for delivery within 1 working day(s).

Price Each

£0.79

(exc. VAT)

£0.95

(inc. VAT)

Units	Per unit
1 - 24	£0.79
25 - 49	£0.67
50 - 99	£0.63
100 - 249	£0.58
250 +	£0.55

RS Stock No.:: 543-0068
Mfr. Part No.:: IRF630NPBF
Brand:: Infineon

Datasheet
ESD Control Selection Guide V1

RS Stock No.:: 543-0068
Mfr. Part No.:: IRF630NPBF
Brand:: Infineon

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	9.3 A
Maximum Drain Source Voltage	200 V
Series	HEXFET
Package Type	TO-220AB
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	300 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	82 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	4.69mm
Length	10.54mm
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	35 nC @ 10 V
Maximum Operating Temperature	+175 °C
Transistor Material	Si
Height	8.77mm
Minimum Operating Temperature	-55 °C

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	9.3 A
Maximum Drain Source Voltage	200 V
Series	HEXFET
Package Type	TO-220AB
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	300 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	82 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	4.69mm
Length	10.54mm
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	35 nC @ 10 V
Maximum Operating Temperature	+175 °C
Transistor Material	Si
Height	8.77mm
Minimum Operating Temperature	-55 °C

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