Infineon HEXFET N-Channel MOSFET, 9.3 A, 200 V, 3-Pin TO-220AB IRF630NPBF

RS Stock No.:: 543-0068
Mfr. Part No.:: IRF630NPBF
Brand:: Infineon

Infineon HEXFET N-Channel MOSFET, 9.3 A, 200 V, 3-Pin TO-220AB IRF630NPBF

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£0.94

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RS Stock No.:: 543-0068
Mfr. Part No.:: IRF630NPBF
Brand:: Infineon

N-Channel Power MOSFET 150V to 600V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 9.3A Maximum Continuous Drain Current, 82W Maximum Power Dissipation - IRF630NPBF

This N-channel MOSFET is designed for a range of applications in the automation and electronics sectors. It offers optimal power dissipation capabilities and efficient performance, crucial for high-performance systems. With a maximum drain-source voltage of 200V and a continuous drain current of 9.3A, it ensures dependable operation in challenging electronic environments.

Features & Benefits

• High power rating supports extensive electrical applications
• Efficient design lowers thermal resistance for effective cooling
• Fast switching speeds improve performance in dynamic systems
• Simple drive requirements aid in circuit integration
• Fully avalanche rated, making it suitable for rugged conditions

Applications

• Utilised in industrial power supplies to maintain stable voltage regulation
• Employed in motor control systems for efficient functionality
• Ideal for DC-DC converters and power management circuits
• Used in HVAC systems to control compressor motors
• Appropriate for renewable energy systems, enhancing power efficiency

What is the maximum gate-source voltage that can be applied?

The maximum gate-source voltage is ±20V, ensuring compatibility with various circuit designs.

How does the device handle thermal dissipation during operation?

It has a power dissipation capacity of 82W, allowing for efficient heat management while in use.

Is there a specific mounting type recommended for optimal performance?

The MOSFET is intended for through-hole mounting, which promotes reliable thermal management and electrical connectivity.

What type of applications benefit from its fast switching capabilities?

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	9.3 A
Maximum Drain Source Voltage	200 V
Series	HEXFET
Package Type	TO-220AB
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	300 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	82 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Transistor Material	Si
Width	4.69mm
Typical Gate Charge @ Vgs	35 nC @ 10 V
Number of Elements per Chip	1
Length	10.54mm
Maximum Operating Temperature	+175 °C
Forward Diode Voltage	1.3V
Height	8.77mm
Minimum Operating Temperature	-55 °C