Infineon HEXFET N-Channel MOSFET, 18 A, 200 V, 3-Pin TO-220AB IRFB4020PBF
- RS Stock No.:
- 145-8608
- Mfr. Part No.:
- IRFB4020PBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 50 units)*
£63.85
(exc. VAT)
£76.60
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 750 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | £1.277 | £63.85 |
| 100 - 200 | £1.035 | £51.75 |
| 250 - 450 | £0.971 | £48.55 |
| 500 - 950 | £0.907 | £45.35 |
| 1000 + | £0.83 | £41.50 |
*price indicative
- RS Stock No.:
- 145-8608
- Mfr. Part No.:
- IRFB4020PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 18 A | |
| Maximum Drain Source Voltage | 200 V | |
| Series | HEXFET | |
| Package Type | TO-220AB | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 100 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.9V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 100 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 18 nC @ 10 V | |
| Length | 10.66mm | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +175 °C | |
| Width | 4.82mm | |
| Number of Elements per Chip | 1 | |
| Height | 9.02mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 18 A | ||
Maximum Drain Source Voltage 200 V | ||
Series HEXFET | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 100 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.9V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 100 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 18 nC @ 10 V | ||
Length 10.66mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Width 4.82mm | ||
Number of Elements per Chip 1 | ||
Height 9.02mm | ||
Minimum Operating Temperature -55 °C | ||
Digital Audio MOSFET, Infineon
Class D amplifiers are fast becoming the preferred solution for professional and home audio and video systems. Infineon offers a comprehensive range that simplify high-efficiency Class D amplifier design.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon HEXFET N-Channel MOSFET 200 V, 3-Pin TO-220AB IRFB4020PBF
- Infineon HEXFET N-Channel MOSFET 200 V, 3-Pin TO-220AB IRF640NPBF
- Infineon HEXFET N-Channel MOSFET 200 V, 3-Pin D2PAK IRF640NSTRLPBF
- Infineon HEXFET N-Channel MOSFET 200 V, 3-Pin D2PAK IRFS4020TRLPBF
- Vishay N-Channel MOSFET 200 V, 3-Pin TO-220AB IRF640PBF
- Infineon HEXFET N-Channel MOSFET 55 V, 3-Pin TO-220AB IRLZ24NPBF
- onsemi N-Channel MOSFET 200 V, 3-Pin TO-220 IRL640A
- STMicroelectronics STripFET N-Channel MOSFET 200 V, 3-Pin TO-220 STP20NF20