Infineon HEXFET N-Channel MOSFET, 18 A, 200 V, 3-Pin TO-220AB IRF640NPBF
- RS Stock No.:
- 541-0014
- Distrelec Article No.:
- 303-41-285
- Mfr. Part No.:
- IRF640NPBF
- Brand:
- Infineon
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£0.66
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£0.79
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Units | Per unit |
---|---|
1 - 9 | £0.66 |
10 - 49 | £0.60 |
50 - 99 | £0.56 |
100 - 249 | £0.52 |
250 + | £0.49 |
*price indicative
- RS Stock No.:
- 541-0014
- Distrelec Article No.:
- 303-41-285
- Mfr. Part No.:
- IRF640NPBF
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 18 A | |
Maximum Drain Source Voltage | 200 V | |
Series | HEXFET | |
Package Type | TO-220AB | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 150 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 150 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Width | 4.83mm | |
Transistor Material | Si | |
Number of Elements per Chip | 1 | |
Maximum Operating Temperature | +175 °C | |
Length | 10.67mm | |
Typical Gate Charge @ Vgs | 67 nC @ 10 V | |
Forward Diode Voltage | 1.3V | |
Minimum Operating Temperature | -55 °C | |
Height | 8.77mm | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 18 A | ||
Maximum Drain Source Voltage 200 V | ||
Series HEXFET | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 150 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 150 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 4.83mm | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Length 10.67mm | ||
Typical Gate Charge @ Vgs 67 nC @ 10 V | ||
Forward Diode Voltage 1.3V | ||
Minimum Operating Temperature -55 °C | ||
Height 8.77mm | ||
N-Channel Power MOSFET 150V to 600V, Infineon
Infineon HEXFET Series MOSFET, 18A Maximum Continuous Drain Current, 150W Maximum Power Dissipation - IRF640NPBF
Features & Benefits
• Operates effectively at voltage levels up to 200V for increased versatility
• Low on-resistance minimises energy loss during operation
• Simplified drive requirements facilitate integration into circuits
• Fully avalanche rated for enhanced safety and performance
Applications
• Suitable for motor control in robotics
• Ideal for renewable energy systems such as solar inverters
• Employed in power switching systems for electrical equipment
• Utilised in amplification stages for audio equipment
How does temperature affect the performance?
What is the significance of the maximum gate-source voltage?
Can this component handle sudden voltage spikes?
What is the impact of on-resistance on overall efficiency?
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