Infineon HEXFET N-Channel MOSFET, 18 A, 200 V, 3-Pin TO-220AB IRF640NPBF
- RS Stock No.:
- 541-0014
- Distrelec Article No.:
- 303-41-285
- Mfr. Part No.:
- IRF640NPBF
- Brand:
- Infineon
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Subtotal (1 unit)*
£0.66
(exc. VAT)
£0.79
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 1,170 unit(s) ready to ship
- Plus 219 unit(s) ready to ship from another location
- Plus 10,350 unit(s) shipping from 09 September 2025
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Units | Per unit |
|---|---|
| 1 - 9 | £0.66 |
| 10 - 49 | £0.60 |
| 50 - 99 | £0.56 |
| 100 - 249 | £0.52 |
| 250 + | £0.49 |
*price indicative
- RS Stock No.:
- 541-0014
- Distrelec Article No.:
- 303-41-285
- Mfr. Part No.:
- IRF640NPBF
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 18 A | |
| Maximum Drain Source Voltage | 200 V | |
| Package Type | TO-220AB | |
| Series | HEXFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 150 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 150 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +175 °C | |
| Length | 10.67mm | |
| Number of Elements per Chip | 1 | |
| Width | 4.83mm | |
| Typical Gate Charge @ Vgs | 67 nC @ 10 V | |
| Height | 8.77mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.3V | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 18 A | ||
Maximum Drain Source Voltage 200 V | ||
Package Type TO-220AB | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 150 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 150 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Length 10.67mm | ||
Number of Elements per Chip 1 | ||
Width 4.83mm | ||
Typical Gate Charge @ Vgs 67 nC @ 10 V | ||
Height 8.77mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.3V | ||
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