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Infineon HEXFET N-Channel MOSFET, 18 A, 200 V, 3-Pin D2PAK IRF640NSTRLPBF

RS Stock No.:: 831-2853
Mfr. Part No.:: IRF640NSTRLPBF
Brand:: Infineon

Infineon HEXFET N-Channel MOSFET, 18 A, 200 V, 3-Pin D2PAK IRF640NSTRLPBF

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Subtotal (1 pack of 10 units)*

£10.10

(exc. VAT)

£12.10

(inc. VAT)

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In Stock

160 unit(s) ready to ship
Plus 1,010 unit(s) shipping from 10 September 2025

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Units	Per unit	Per Pack*
10 - 40	£1.01	£10.10
50 - 90	£0.96	£9.60
100 - 240	£0.919	£9.19
250 - 490	£0.859	£8.59
500 +	£0.808	£8.08

*price indicative

RS Stock No.:: 831-2853
Mfr. Part No.:: IRF640NSTRLPBF
Brand:: Infineon

N-Channel Power MOSFET 150V to 600V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 18A Maximum Continuous Drain Current, 150W Maximum Power Dissipation - IRF640NSTRLPBF

This MOSFET is essential for efficient power management across various applications, controlling electrical current flow in circuits to ensure performance and reliability. Its robust specifications make it particularly suitable for automation and electronic systems in contemporary electronics.

Features & Benefits

• N-channel configuration supports enhancement mode operation
• Maximum continuous drain current of 18A
• Peak drain-source voltage of 200V for diverse applications
• D2PAK package designed for surface mount convenience
• Low Rds(on) of 150mΩ reduces energy loss during operation
• High maximum operating temperature of +175°C for various environments

Applications

• Power management in automotive electronics
• Industrial power supplies for automation systems
• Motor control across different sectors
• Renewable energy systems for energy conversion
• High-frequency power inverter designs

What is the maximum drain-source voltage?

The maximum drain-source voltage rating is 200V, providing flexibility for high-voltage applications.

How is heat dissipation managed during operation?

This MOSFET offers a power dissipation capability of 150W, and its package design promotes effective heat management under high loads.

What are the implications of the gate threshold voltage range?

With a maximum gate threshold voltage of 4V and a minimum of 2V, it offers engineers a versatile range for switching applications.

Can this component be used in parallel configurations?

Yes, it can be easily paralleled due to its low on-resistance, making it suitable for high current applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	18 A
	Maximum Drain Source Voltage	200 V
	Package Type	D2PAK (TO-263)
	Series	HEXFET
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	150 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	150 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Width	9.65mm
	Transistor Material	Si
	Number of Elements per Chip	1
	Maximum Operating Temperature	+175 °C
	Length	10.67mm
	Typical Gate Charge @ Vgs	67 nC @ 10 V
	Height	4.83mm
	Minimum Operating Temperature	-55 °C
	Forward Diode Voltage	1.3V

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 18 A
	Maximum Drain Source Voltage 200 V
	Package Type D2PAK (TO-263)
	Series HEXFET
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 150 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 150 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Width 9.65mm
	Transistor Material Si
	Number of Elements per Chip 1
	Maximum Operating Temperature +175 °C
	Length 10.67mm
	Typical Gate Charge @ Vgs 67 nC @ 10 V
	Height 4.83mm
	Minimum Operating Temperature -55 °C
	Forward Diode Voltage 1.3V

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