Infineon HEXFET N-Channel MOSFET, 18 A, 200 V, 3-Pin D2PAK IRF640NSTRLPBF
- RS Stock No.:
- 165-5658
- Mfr. Part No.:
- IRF640NSTRLPBF
- Brand:
- Infineon
Subtotal (1 reel of 800 units)*
£475.20
(exc. VAT)
£570.40
(inc. VAT)
FREE delivery for orders over £50.00
- 800 unit(s) ready to ship
Units | Per unit | Per Reel* |
---|---|---|
800 - 800 | £0.594 | £475.20 |
1600 - 1600 | £0.564 | £451.20 |
2400 + | £0.529 | £423.20 |
*price indicative
- RS Stock No.:
- 165-5658
- Mfr. Part No.:
- IRF640NSTRLPBF
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 18 A | |
Maximum Drain Source Voltage | 200 V | |
Package Type | D2PAK (TO-263) | |
Series | HEXFET | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 150 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 150 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Transistor Material | Si | |
Number of Elements per Chip | 1 | |
Typical Gate Charge @ Vgs | 67 nC @ 10 V | |
Maximum Operating Temperature | +175 °C | |
Length | 10.67mm | |
Width | 9.65mm | |
Minimum Operating Temperature | -55 °C | |
Height | 4.83mm | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 18 A | ||
Maximum Drain Source Voltage 200 V | ||
Package Type D2PAK (TO-263) | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 150 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 150 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 67 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Length 10.67mm | ||
Width 9.65mm | ||
Minimum Operating Temperature -55 °C | ||
Height 4.83mm | ||
N-Channel Power MOSFET 150V to 600V, Infineon
Infineon HEXFET Series MOSFET, 18A Maximum Continuous Drain Current, 150W Maximum Power Dissipation - IRF640NSTRLPBF
Features & Benefits
• Maximum continuous drain current of 18A
• Peak drain-source voltage of 200V for diverse applications
• D2PAK package designed for surface mount convenience
• Low Rds(on) of 150mΩ reduces energy loss during operation
• High maximum operating temperature of +175°C for various environments
Applications
• Industrial power supplies for automation systems
• Motor control across different sectors
• Renewable energy systems for energy conversion
• High-frequency power inverter designs
What is the maximum drain-source voltage?
How is heat dissipation managed during operation?
What are the implications of the gate threshold voltage range?
Can this component be used in parallel configurations?
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