Infineon HEXFET Type N-Channel MOSFET, 18 A, 200 V Enhancement, 3-Pin TO-263
- RS Stock No.:
- 165-5658
- Mfr. Part No.:
- IRF640NSTRLPBF
- Brand:
- Infineon
Subtotal (1 reel of 800 units)*
£324.00
(exc. VAT)
£388.80
(inc. VAT)
FREE delivery for orders over £50.00
- Plus 800 unit(s) shipping from 09 February 2026
Units | Per unit | Per Reel* |
|---|---|---|
| 800 - 800 | £0.405 | £324.00 |
| 1600 - 1600 | £0.385 | £308.00 |
| 2400 + | £0.36 | £288.00 |
*price indicative
- RS Stock No.:
- 165-5658
- Mfr. Part No.:
- IRF640NSTRLPBF
- Brand:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | HEXFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 150mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 150W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 67nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.83mm | |
| Width | 9.65 mm | |
| Standards/Approvals | No | |
| Length | 10.67mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series HEXFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 150mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 150W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 67nC | ||
Maximum Operating Temperature 175°C | ||
Height 4.83mm | ||
Width 9.65 mm | ||
Standards/Approvals No | ||
Length 10.67mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 18A Maximum Continuous Drain Current, 150W Maximum Power Dissipation - IRF640NSTRLPBF
Features & Benefits
Applications
What is the maximum drain-source voltage?
How is heat dissipation managed during operation?
What are the implications of the gate threshold voltage range?
Can this component be used in parallel configurations?
How should it be soldered for optimal performance?
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