Infineon HEXFET N-Channel MOSFET, 18 A, 200 V, 3-Pin D2PAK IRFS4020TRLPBF

RS Stock No.:: 168-6013
Mfr. Part No.:: IRFS4020TRLPBF
Brand:: Infineon

Infineon HEXFET N-Channel MOSFET, 18 A, 200 V, 3-Pin D2PAK IRFS4020TRLPBF

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Subtotal (1 reel of 800 units)*

£546.40

(exc. VAT)

£656.00

(inc. VAT)

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Shipping from 23 January 2026

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Units	Per unit	Per Reel*
800 - 800	£0.683	£546.40
1600 +	£0.649	£519.20

*price indicative

RS Stock No.:: 168-6013
Mfr. Part No.:: IRFS4020TRLPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	18 A
	Maximum Drain Source Voltage	200 V
	Package Type	D2PAK (TO-263)
	Series	HEXFET
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	105 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4.9V
	Minimum Gate Threshold Voltage	3V
	Maximum Power Dissipation	100 W
	Maximum Gate Source Voltage	-20 V, +20 V
	Number of Elements per Chip	1
	Maximum Operating Temperature	+175 °C
	Width	4.83mm
	Typical Gate Charge @ Vgs	18 nC @ 10 V
	Length	10.67mm
	Height	9.65mm
	Minimum Operating Temperature	-55 °C
	Forward Diode Voltage	1.3V

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 18 A
	Maximum Drain Source Voltage 200 V
	Package Type D2PAK (TO-263)
	Series HEXFET
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 105 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4.9V
	Minimum Gate Threshold Voltage 3V
	Maximum Power Dissipation 100 W
	Maximum Gate Source Voltage -20 V, +20 V
	Number of Elements per Chip 1
	Maximum Operating Temperature +175 °C
	Width 4.83mm
	Typical Gate Charge @ Vgs 18 nC @ 10 V
	Length 10.67mm
	Height 9.65mm
	Minimum Operating Temperature -55 °C
	Forward Diode Voltage 1.3V

Digital Audio MOSFET, Infineon

Class D amplifiers are fast becoming the preferred solution for professional and home audio and video systems. Infineon offers a comprehensive range that simplify high-efficiency Class D amplifier design.

Infineon HEXFET Series MOSFET, 18A Maximum Continuous Drain Current, 100W Maximum Power Dissipation - IRFS4020TRLPBF

This MOSFET is designed for optimised performance in Class-D audio amplifier applications. Advanced processing techniques yield low on-resistance while enhancing efficiency, total harmonic distortion (THD), and electromagnetic interference (EMI). It can function effectively at elevated temperatures, making it suitable for various environments.

Features & Benefits

• Designed for high-efficiency Class-D audio amplification
• Low Rds(on) improves overall efficiency
• Operating junction temperature up to 175°C ensures robustness
• Repetitive avalanche capability safeguards against voltage spikes

Applications

• Utilised in Class-D audio amplifiers for improved sound quality
• Ideal for high current power supply
• Suitable for consumer and professional audio equipment
• Employed in high-performance automotive audio systems

What is the maximum continuous drain current?

The device can handle a maximum continuous drain current of 18A at 25°C.

Can this device operate at high temperatures?

Yes, it is designed to function effectively at temperatures as high as 175°C.

What configurations can it be used in?

It is suitable for half-bridge configurations in audio amplifiers, delivering significant power outputs.

How does low gate charge impact performance?

The low gate charge enhances efficiency and reduces the turn-on time, thus improving overall amplifier performance.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.