Infineon HEXFET N-Channel MOSFET, 18 A, 200 V, 3-Pin D2PAK IRFS4020TRLPBF
- RS Stock No.:
- 168-6013
- Mfr. Part No.:
- IRFS4020TRLPBF
- Brand:
- Infineon
Subtotal (1 reel of 800 units)*
£546.40
(exc. VAT)
£656.00
(inc. VAT)
FREE delivery for orders over £50.00
- Shipping from 23 January 2026
Units | Per unit | Per Reel* |
---|---|---|
800 - 800 | £0.683 | £546.40 |
1600 + | £0.649 | £519.20 |
*price indicative
- RS Stock No.:
- 168-6013
- Mfr. Part No.:
- IRFS4020TRLPBF
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 18 A | |
Maximum Drain Source Voltage | 200 V | |
Package Type | D2PAK (TO-263) | |
Series | HEXFET | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 105 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4.9V | |
Minimum Gate Threshold Voltage | 3V | |
Maximum Power Dissipation | 100 W | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Number of Elements per Chip | 1 | |
Maximum Operating Temperature | +175 °C | |
Width | 4.83mm | |
Typical Gate Charge @ Vgs | 18 nC @ 10 V | |
Length | 10.67mm | |
Height | 9.65mm | |
Minimum Operating Temperature | -55 °C | |
Forward Diode Voltage | 1.3V | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 18 A | ||
Maximum Drain Source Voltage 200 V | ||
Package Type D2PAK (TO-263) | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 105 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.9V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 100 W | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Width 4.83mm | ||
Typical Gate Charge @ Vgs 18 nC @ 10 V | ||
Length 10.67mm | ||
Height 9.65mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.3V | ||
Digital Audio MOSFET, Infineon
Infineon HEXFET Series MOSFET, 18A Maximum Continuous Drain Current, 100W Maximum Power Dissipation - IRFS4020TRLPBF
Features & Benefits
• Low Rds(on) improves overall efficiency
• Operating junction temperature up to 175°C ensures robustness
• Repetitive avalanche capability safeguards against voltage spikes
Applications
• Ideal for high current power supply
• Suitable for consumer and professional audio equipment
• Employed in high-performance automotive audio systems
What is the maximum continuous drain current?
Can this device operate at high temperatures?
What configurations can it be used in?
How does low gate charge impact performance?
Related links
- Infineon HEXFET N-Channel MOSFET 200 V, 3-Pin D2PAK IRFS4020TRLPBF
- Infineon HEXFET N-Channel MOSFET 200 V, 3-Pin D2PAK IRF640NSTRLPBF
- Infineon HEXFET N-Channel MOSFET 200 V, 3-Pin TO-220AB IRFB4020PBF
- Infineon HEXFET N-Channel MOSFET 200 V, 3-Pin TO-220AB IRF640NPBF
- Vishay N-Channel MOSFET 200 V, 3-Pin D2PAK IRF640SPBF
- Infineon HEXFET N-Channel MOSFET 55 V, 3-Pin TO-220AB IRLZ24NPBF
- Infineon HEXFET N-Channel MOSFET 40 V, 3-Pin D2PAK IRL1404ZSTRLPBF
- onsemi N-Channel MOSFET 200 V, 3-Pin TO-220 IRL640A