MPN

Infineon HEXFET Type N-Channel MOSFET, 173 A, 60 V Enhancement, 3-Pin TO-263

RS Stock No.:: 273-3030
Mfr. Part No.:: IRFS7537TRLPBF
Brand:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 173 A, 60 V Enhancement, 3-Pin TO-263

Bulk discount available

Subtotal (1 pack of 5 units)*

£7.20

(exc. VAT)

£8.65

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

Plus 785 unit(s) shipping from 29 December 2025

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
5 - 20	£1.44	£7.20
25 - 45	£1.202	£6.01
50 - 95	£1.108	£5.54
100 - 245	£1.028	£5.14
250 +	£1.008	£5.04

*price indicative

RS Stock No.:: 273-3030
Mfr. Part No.:: IRFS7537TRLPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	173A
	Maximum Drain Source Voltage Vds	60V
	Package Type	TO-263
	Series	HEXFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	3.30mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	±20 V
	Maximum Power Dissipation Pd	230W
	Typical Gate Charge Qg @ Vgs	142nC
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS Compliant

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 173A
	Maximum Drain Source Voltage Vds 60V
	Package Type TO-263
	Series HEXFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 3.30mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs ±20 V
	Maximum Power Dissipation Pd 230W
	Typical Gate Charge Qg @ Vgs 142nC
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS Compliant