Infineon HEXFET N-Channel MOSFET, 173 A, 60 V TO-220AB IRFB7537PBF
- RS Stock No.:
- 257-9361
- Mfr. Part No.:
- IRFB7537PBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 50 units)*
£38.85
(exc. VAT)
£46.60
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 350 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
---|---|---|
50 - 50 | £0.777 | £38.85 |
100 - 200 | £0.66 | £33.00 |
250 - 450 | £0.614 | £30.70 |
500 - 950 | £0.575 | £28.75 |
1000 + | £0.552 | £27.60 |
*price indicative
- RS Stock No.:
- 257-9361
- Mfr. Part No.:
- IRFB7537PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 173 A | |
Maximum Drain Source Voltage | 60 V | |
Package Type | TO-220AB | |
Series | HEXFET | |
Mounting Type | Through Hole | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 173 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type TO-220AB | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
The Infineon IRFB series is the 60V single n channel strong IRFET power mosfet in a TO 220 package. The strong IRFET power mosfet family is optimized for low RDS (on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including dc motors, battery management systems, inverters, and dc-dc converters.
Industry standard through hole power package
High current rating
Product qualification according to JEDEC standard
Silicon optimized for applications switching below 100 kHz
Softer body diode compared to previous silicon generation
Wide portfolio available
High current rating
Product qualification according to JEDEC standard
Silicon optimized for applications switching below 100 kHz
Softer body diode compared to previous silicon generation
Wide portfolio available
Related links
- Infineon HEXFET N-Channel MOSFET 60 V TO-220AB IRFB7537PBF
- Infineon HEXFET N-Channel MOSFET 60 V, 3-Pin D2PAK IRFS7537TRLPBF
- Infineon N-Channel MOSFET 30 V, 8-Pin TSDSON-8 FL BSZ0500NSIATMA1
- Infineon AIM SiC N-Channel MOSFET 750 V, 22-Pin PG-HDSOP-22 AIMDQ75R008M1HXUMA1
- Infineon IMD SiC N-Channel MOSFET 750 V, 22-Pin PG-HDSOP-22 IMDQ75R008M1HXUMA1
- Infineon N-Channel MOSFET 80 V, 3-Pin D2PAK IPB020N08N5ATMA1
- Infineon IAU N-Channel MOSFET 40 V, 8-Pin PG-TDSON-8 IAUCN04S7N015ATMA1
- Infineon HEXFET N-Channel MOSFET 40 V TO-220AB IRF1104PBF