Infineon HEXFET N-Channel MOSFET, 43 A, 60 V, 3-Pin D2PAK IRFS3806TRLPBF
- RS Stock No.:
- 827-4101
- Mfr. Part No.:
- IRFS3806TRLPBF
- Brand:
- Infineon
Subtotal (1 pack of 10 units)*
£7.30
(exc. VAT)
£8.80
(inc. VAT)
FREE delivery for orders over £50.00
- 1,420 unit(s) ready to ship
| Units | Per unit | Per Pack* | 
|---|---|---|
| 10 - 40 | £0.73 | £7.30 | 
| 50 - 90 | £0.693 | £6.93 | 
| 100 - 240 | £0.664 | £6.64 | 
| 250 - 490 | £0.635 | £6.35 | 
| 500 + | £0.401 | £4.01 | 
*price indicative
- RS Stock No.:
- 827-4101
- Mfr. Part No.:
- IRFS3806TRLPBF
- Brand:
- Infineon
| Select all | Attribute | Value | 
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 43 A | |
| Maximum Drain Source Voltage | 60 V | |
| Series | HEXFET | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 15.8 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 71 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Length | 10.67mm | |
| Maximum Operating Temperature | +175 °C | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 22 nC @ 10 V | |
| Width | 9.65mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 4.83mm | |
| Forward Diode Voltage | 1.3V | |
| Select all | ||
|---|---|---|
| Brand Infineon | ||
| Channel Type N | ||
| Maximum Continuous Drain Current 43 A | ||
| Maximum Drain Source Voltage 60 V | ||
| Series HEXFET | ||
| Package Type D2PAK (TO-263) | ||
| Mounting Type Surface Mount | ||
| Pin Count 3 | ||
| Maximum Drain Source Resistance 15.8 mΩ | ||
| Channel Mode Enhancement | ||
| Maximum Gate Threshold Voltage 4V | ||
| Minimum Gate Threshold Voltage 2V | ||
| Maximum Power Dissipation 71 W | ||
| Transistor Configuration Single | ||
| Maximum Gate Source Voltage -20 V, +20 V | ||
| Number of Elements per Chip 1 | ||
| Length 10.67mm | ||
| Maximum Operating Temperature +175 °C | ||
| Transistor Material Si | ||
| Typical Gate Charge @ Vgs 22 nC @ 10 V | ||
| Width 9.65mm | ||
| Minimum Operating Temperature -55 °C | ||
| Height 4.83mm | ||
| Forward Diode Voltage 1.3V | ||
- COO (Country of Origin):
- CN
N-Channel Power MOSFET 60V to 80V, Infineon
Infineon HEXFET Series MOSFET, 43A Maximum Continuous Drain Current, 71W Maximum Power Dissipation - IRFS3806TRLPBF
Features & Benefits
• Efficient operation with a maximum drain-source voltage of 60V
• Low on-resistance reduces power loss
• High-temperature application suitability with a range up to +175°C
• Space-saving surface mount design
• Enhanced ruggedness against dynamic stress for consistent performance
Applications
• Used in uninterruptible power supply systems
• Applicable in synchronous rectification within switched-mode power supplies
• Suitable for hard-switched and high-frequency circuits
What is the maximum gate-to-source voltage?
How does the on-resistance affect power dissipation?
What is the typical gate charge required?
Is it compatible with surface mount PCB designs?
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