Infineon HEXFET N-Channel MOSFET, 43 A, 60 V, 3-Pin D2PAK IRFS3806TRLPBF

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Packaging Options:
RS Stock No.:
827-4101
Mfr. Part No.:
IRFS3806TRLPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

43 A

Maximum Drain Source Voltage

60 V

Package Type

D2PAK (TO-263)

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

15.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

71 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

22 nC @ 10 V

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.67mm

Width

9.65mm

Height

4.83mm

Forward Diode Voltage

1.3V

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
CN

N-Channel Power MOSFET 60V to 80V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 43A Maximum Continuous Drain Current, 71W Maximum Power Dissipation - IRFS3806TRLPBF


This MOSFET is crafted for optimal performance in high-efficiency applications. Its enhancement mode configuration is pivotal in power management, driving significant usage across diverse electronic systems. It supports efficient switching and signal amplification, essential for sectors such as automation, electronics, and the electrical and mechanical industries.

Features & Benefits


• High continuous drain current capability of up to 43A
• Efficient operation with a maximum drain-source voltage of 60V
• Low on-resistance reduces power loss
• High-temperature application suitability with a range up to +175°C
• Space-saving surface mount design
• Enhanced ruggedness against dynamic stress for consistent performance

Applications


• Ideal for high-speed power switching scenarios
• Used in uninterruptible power supply systems
• Applicable in synchronous rectification within switched-mode power supplies
• Suitable for hard-switched and high-frequency circuits

What is the maximum gate-to-source voltage?


The maximum gate-to-source voltage for this component is -20V to +20V, allowing flexibility in various circuit designs.

How does the on-resistance affect power dissipation?


Lower on-resistance minimises power dissipation during operation, leading to enhanced efficiency and thermal performance.

What is the typical gate charge required?


The typical gate charge at a gate-source voltage of 10V is 22nC, enabling quick switching transitions.

Is it compatible with surface mount PCB designs?


Yes, the surface mount design is suitable for modern PCB layouts, facilitating integration into compact electronic devices.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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