Infineon HEXFET N-Channel MOSFET, 43 A, 150 V, 3-Pin TO-220AB IRF3415PBF
- RS Stock No.:
- 919-4996
- Mfr. Part No.:
- IRF3415PBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 50 units)*
£70.15
(exc. VAT)
£84.20
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 350 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | £1.403 | £70.15 |
| 100 - 200 | £1.235 | £61.75 |
| 250 - 450 | £1.151 | £57.55 |
| 500 - 950 | £1.067 | £53.35 |
| 1000 + | £0.996 | £49.80 |
*price indicative
- RS Stock No.:
- 919-4996
- Mfr. Part No.:
- IRF3415PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 43 A | |
| Maximum Drain Source Voltage | 150 V | |
| Series | HEXFET | |
| Package Type | TO-220AB | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 42 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 200 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 200 nC @ 10 V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 8.77mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 43 A | ||
Maximum Drain Source Voltage 150 V | ||
Series HEXFET | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 42 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 200 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 200 nC @ 10 V | ||
Minimum Operating Temperature -55 °C | ||
Height 8.77mm | ||
- COO (Country of Origin):
- CN
N-Channel Power MOSFET 150V to 600V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon HEXFET N-Channel MOSFET 150 V, 3-Pin TO-220AB IRF3415PBF
- Infineon HEXFET N-Channel MOSFET 150 V, 3-Pin TO-220AB IRFB4115GPBF
- Infineon HEXFET N-Channel MOSFET 150 V, 3-Pin TO-220AB IRFB4115PBF
- Infineon HEXFET N-Channel MOSFET 150 V, 3-Pin TO-220AB IRFB23N15DPBF
- Infineon HEXFET N-Channel MOSFET 150 V, 3-Pin TO-220AB IRFB4615PBF
- Infineon HEXFET N-Channel MOSFET 150 V, 3-Pin TO-220AB IRFB4321PBF
- Infineon HEXFET N-Channel MOSFET 150 V, 3-Pin TO-220AB IRFB4019PBF
- Infineon HEXFET N-Channel MOSFET 150 V, 3-Pin TO-220AB IRFB4228PBF