Infineon HEXFET Type N-Channel MOSFET, 43 A, 200 V Enhancement, 3-Pin TO-220 IRFB38N20DPBF

RS Stock No.:: 827-3944
Mfr. Part No.:: IRFB38N20DPBF
Brand:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 43 A, 200 V Enhancement, 3-Pin TO-220 IRFB38N20DPBF

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Subtotal (1 pack of 5 units)*

£10.95

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£13.15

(inc. VAT)

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Plus 50 unit(s) shipping from 29 December 2025
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Units	Per unit	Per Pack*
5 - 45	£2.19	£10.95
50 - 120	£2.08	£10.40
125 - 245	£1.992	£9.96
250 - 495	£1.862	£9.31
500 +	£1.752	£8.76

*price indicative

RS Stock No.:: 827-3944
Mfr. Part No.:: IRFB38N20DPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	43A
	Maximum Drain Source Voltage Vds	200V
	Series	HEXFET
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	54mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	60nC
	Forward Voltage Vf	1.5V
	Maximum Power Dissipation Pd	300W
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Operating Temperature	175°C
	Length	10.67mm
	Width	4.69 mm
	Height	16.51mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 43A
	Maximum Drain Source Voltage Vds 200V
	Series HEXFET
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 54mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 60nC
	Forward Voltage Vf 1.5V
	Maximum Power Dissipation Pd 300W
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Operating Temperature 175°C
	Length 10.67mm
	Width 4.69 mm
	Height 16.51mm
	Standards/Approvals No
	Automotive Standard No

Infineon HEXFET Series MOSFET, 43A Maximum Continuous Drain Current, 300W Maximum Power Dissipation - IRFB38N20DPBF

This MOSFET is designed for high efficiency and effective thermal management in varied applications. Its robust enhancement mode N-channel design allows for considerable continuous drain currents while ensuring low on-resistance. This component is well-suited for power management solutions, enhancing performance and dependability in numerous electronic environments.

Features & Benefits

• Supports a maximum continuous drain current of 43A

• Provides a low Rds(on) of 54mΩ to minimise energy loss

• Capable of withstanding drain-source voltages up to 200V

• High operating temperature tolerance ranging from -55°C to +175°C

• Designed for high-speed switching applications with low gate charge

• Integrates effectively into DC-DC converters and power supplies

Applications

• Utilised in high-frequency DC-DC converters for efficient power management

• Suitable for in plasma display panels

• Employed in industrial automation systems requiring consistent switching

• Used in power supplies where thermal efficiency is crucial

• Ideal for electronic designs needing high performance at elevated temperatures

What kind of currents can it handle in high-temperature applications?

It can manage up to 30A continuous drain current at 100°C, ensuring consistent performance under elevated temperatures.

How does this component perform in high-frequency applications?

It is explicitly designed for high-speed switching, featuring low gate charge and minimal delay times, making it appropriate for such applications.

What packaging options are available for this product?

It is available in a TO-220AB package, facilitating through-hole mounting for easy integration into electronic circuits.

Can this be used in conjunction with other power management devices?

Yes, it is frequently used alongside various DC-DC converters to enhance efficiency in power delivery systems.

What measures should be taken for installation?

Ensure proper thermal management is in place, including heatsinking, to maintain optimal junction temperatures during operation.

Infineon Schottky Diodes & MOSFETs – Matched for Power, Built for Efficiency

Pair Infineon Schottky diodes with Infineon MOSFETs for a high-efficiency power solution that’s optimised from the ground up. Designed to work together, they deliver fast switching, low losses, and excellent thermal performance—ideal for SMPS, motor drives, and automotive systems. Reduce design complexity and boost reliability with components engineered for synergy.

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