Infineon HEXFET N-Channel MOSFET, 43 A, 200 V, 3-Pin TO-220AB IRFB38N20DPBF
- RS Stock No.:
- 827-3944
- Mfr. Part No.:
- IRFB38N20DPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
£10.95
(exc. VAT)
£13.15
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 65 unit(s) shipping from 22 October 2025
- Plus 195 unit(s) shipping from 29 October 2025
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £2.19 | £10.95 |
| 50 - 120 | £2.08 | £10.40 |
| 125 - 245 | £1.992 | £9.96 |
| 250 - 495 | £1.862 | £9.31 |
| 500 + | £1.752 | £8.76 |
*price indicative
- RS Stock No.:
- 827-3944
- Mfr. Part No.:
- IRFB38N20DPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 43 A | |
| Maximum Drain Source Voltage | 200 V | |
| Package Type | TO-220AB | |
| Series | HEXFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 54 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 300 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Width | 4.83mm | |
| Maximum Operating Temperature | +175 °C | |
| Length | 10.67mm | |
| Typical Gate Charge @ Vgs | 60 nC @ 10 V | |
| Forward Diode Voltage | 1.5V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 16.51mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 43 A | ||
Maximum Drain Source Voltage 200 V | ||
Package Type TO-220AB | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 54 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 300 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 4.83mm | ||
Maximum Operating Temperature +175 °C | ||
Length 10.67mm | ||
Typical Gate Charge @ Vgs 60 nC @ 10 V | ||
Forward Diode Voltage 1.5V | ||
Minimum Operating Temperature -55 °C | ||
Height 16.51mm | ||
N-Channel Power MOSFET 150V to 600V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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