Infineon HEXFET N-Channel MOSFET, 43 A, 200 V, 3-Pin TO-220AB IRFB38N20DPBF

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Subtotal (1 pack of 5 units)*

£10.95

(exc. VAT)

£13.15

(inc. VAT)

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  • 70 unit(s) ready to ship
  • Plus 200 unit(s) shipping from 10 September 2025
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Per Pack*
5 - 45£2.19£10.95
50 - 120£2.08£10.40
125 - 245£1.992£9.96
250 - 495£1.862£9.31
500 +£1.752£8.76

*price indicative

Packaging Options:
RS Stock No.:
827-3944
Mfr. Part No.:
IRFB38N20DPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

43 A

Maximum Drain Source Voltage

200 V

Package Type

TO-220AB

Series

HEXFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

54 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Length

10.67mm

Typical Gate Charge @ Vgs

60 nC @ 10 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Number of Elements per Chip

1

Width

4.83mm

Height

16.51mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

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