N-Channel MOSFET, 43 A, 100 V, 3-Pin TO-220 FP Infineon IRFI4410ZPBF

RS Stock No.:: 827-3972
Mfr. Part No.:: IRFI4410ZPBF
Brand:: Infineon

N-Channel MOSFET, 43 A, 100 V, 3-Pin TO-220 FP Infineon IRFI4410ZPBF

5 In stock for delivery within 1 working days

Not available for guaranteed pre 9am/10am delivery

Price Each (In a Pack of 5)

£1.38

(exc. VAT)

£1.66

(inc. VAT)

Units	Per unit	Per Pack*
5 +	£1.38	£6.90

*price indicative

RS Stock No.:: 827-3972
Mfr. Part No.:: IRFI4410ZPBF
Brand:: Infineon

Technical Reference

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

N-Channel Power MOSFET 100V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	43 A
Maximum Drain Source Voltage	100 V
Series	HEXFET
Package Type	TO-220 FP
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	9.3 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	47 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Number of Elements per Chip	1
Length	10.75mm
Maximum Operating Temperature	+175 °C
Transistor Material	Si
Typical Gate Charge @ Vgs	81 nC @ 10 V
Width	4.83mm
Minimum Operating Temperature	-55 °C
Height	16.13mm