Infineon HEXFET N-Channel MOSFET, 48 A, 60 V, 3-Pin D2PAK IRFZ44ESTRLPBF
- RS Stock No.:
- 215-2605
- Mfr. Part No.:
- IRFZ44ESTRLPBF
- Brand:
- Infineon
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 215-2605
- Mfr. Part No.:
- IRFZ44ESTRLPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 48 A | |
Maximum Drain Source Voltage | 60 V | |
Package Type | D2PAK (TO-263) | |
Series | HEXFET | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 0.023 Ω | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Transistor Material | Si | |
Number of Elements per Chip | 1 | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 48 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type D2PAK (TO-263) | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.023 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
The Infineon series fifth generation HEXFET from International rectifier utilize advanced processing techniques to achieve extremely low on resistance for Silicon area. This benefits, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET are well known for, providing sufficient level device for, provides designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2pack is a surface mount power package capable of accommodating die sizes upto HEX-4. It provide the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2pack is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application.
Advanced Process Technology
Fully avalanche rated
Fast switching
Fully avalanche rated
Fast switching
Related links
- Infineon HEXFET N-Channel MOSFET 60 V, 3-Pin TO-220AB IRFZ44EPBF
- Infineon HEXFET N-Channel MOSFET 60 V, 3-Pin D2PAK IRFS3806TRLPBF
- Infineon HEXFET N-Channel MOSFET 60 V, 3-Pin D2PAK IRLS3036TRLPBF
- Infineon HEXFET N-Channel MOSFET 60 V, 3-Pin D2PAK AUIRFS3306TRL
- Infineon HEXFET N-Channel MOSFET 60 V, 3-Pin D2PAK IRFS7537TRLPBF
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin D2PAK IRL2910STRLPBF
- Infineon HEXFET N-Channel MOSFET 75 V, 3-Pin D2PAK IRFS3307ZTRLPBF
- Infineon HEXFET N-Channel MOSFET 55 V, 3-Pin D2PAK IRL3705NSTRLPBF