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Infineon HEXFET Type N-Channel Power MOSFET, 48 A, 60 V Enhancement, 3-Pin TO-220AB

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Subtotal (1 tube of 50 units)*

£42.30

(exc. VAT)

£50.75

(inc. VAT)

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Units
Per unit
Per Tube*
50 - 50£0.846£42.30
100 - 200£0.804£40.20
250 - 450£0.77£38.50
500 - 1200£0.719£35.95
1250 +£0.677£33.85

*price indicative

RS Stock No.:
919-4937
Mfr. Part No.:
IRFZ44EPBF
Brand:
Infineon
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Brand

Infineon

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

48A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-220AB

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

0.023Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

110W

Typical Gate Charge Qg @ Vgs

60nC

Maximum Gate Source Voltage Vgs

20V

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Length

10.54mm

Width

4.69mm

Standards/Approvals

ANSI Y14.5M, JEDEC TO-220AB

Height

8.77mm

Automotive Standard

No

COO (Country of Origin):
CN

Infineon HEXFET Series MOSFET, 48A Maximum Continuous Drain Current, 110W Maximum Power Dissipation - IRFZ44EPBF


This MOSFET features an N-channel configuration, making it suitable for industrial and automation applications. It supports high continuous drain current, which is advantageous for power applications. Designed for enhanced efficiency, it is Ideal for electric and electronic systems where quick switching and durability are necessary.

Features & Benefits


• Continuous drain current capability up to 48A for effective operation

• Operates at a drain-source voltage of 60V for power management

• Low Rds(on) improves efficiency and reduces power loss

• Packaged in TO-220AB for straightforward installation and heat dissipation

• Fully avalanche rated, ensuring reliability under stress conditions

Applications


• Power supply circuits for increased efficiency

• Motor control in automation tasks

• DC-DC converters for voltage regulation

• High-performance battery management systems

• Electronic switching devices for enhanced control

What is the maximum gate-to-source voltage for safe operation?


The maximum gate-to-source voltage is ±20V, ensuring proper functionality and safety during operation.

How can this component be effectively mounted?


It is designed for through-hole mounting, facilitating a robust attachment to PCB layouts or heatsinks.

What happens if the device exceeds its maximum junction temperature?


Exceeding the maximum junction temperature of 175°C can result in thermal damage; therefore, proper cooling management is essential.

Can this be used in high-speed switching applications?


Yes, it supports fast switching capabilities, making it suitable for applications requiring Rapid signal processing.

What is the typical power dissipation capability at room temperature?


At 25°C, it can dissipate up to 110W, allowing it to handle substantial power flow without overheating.

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