Infineon HEXFET N-Channel MOSFET, 48 A, 60 V, 3-Pin TO-220AB IRFZ44EPBF
- RS Stock No.:
- 919-4937
- Mfr. Part No.:
- IRFZ44EPBF
- Brand:
- Infineon
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 919-4937
- Mfr. Part No.:
- IRFZ44EPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 48 A | |
Maximum Drain Source Voltage | 60 V | |
Package Type | TO-220AB | |
Series | HEXFET | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 23 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 110 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Maximum Operating Temperature | +175 °C | |
Transistor Material | Si | |
Number of Elements per Chip | 1 | |
Typical Gate Charge @ Vgs | 60 nC @ 10 V | |
Height | 8.77mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 48 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type TO-220AB | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 23 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 110 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 60 nC @ 10 V | ||
Height 8.77mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
N-Channel Power MOSFET 60V to 80V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon HEXFET Series MOSFET, 48A Maximum Continuous Drain Current, 110W Maximum Power Dissipation - IRFZ44EPBF
This MOSFET features an N-channel configuration, making it suitable for industrial and automation applications. It supports high continuous drain current, which is advantageous for power applications. Designed for enhanced efficiency, it is ideal for electric and electronic systems where quick switching and durability are necessary.
Features & Benefits
• Continuous drain current capability up to 48A for effective operation
• Operates at a drain-source voltage of 60V for power management
• Low Rds(on) improves efficiency and reduces power loss
• Packaged in TO-220AB for straightforward installation and heat dissipation
• Fully avalanche rated, ensuring reliability under stress conditions
• Operates at a drain-source voltage of 60V for power management
• Low Rds(on) improves efficiency and reduces power loss
• Packaged in TO-220AB for straightforward installation and heat dissipation
• Fully avalanche rated, ensuring reliability under stress conditions
Applications
• Power supply circuits for increased efficiency
• Motor control in automation tasks
• DC-DC converters for voltage regulation
• High-performance battery management systems
• Electronic switching devices for enhanced control
• Motor control in automation tasks
• DC-DC converters for voltage regulation
• High-performance battery management systems
• Electronic switching devices for enhanced control
What is the maximum gate-to-source voltage for safe operation?
The maximum gate-to-source voltage is ±20V, ensuring proper functionality and safety during operation.
How can this component be effectively mounted?
It is designed for through-hole mounting, facilitating a robust attachment to PCB layouts or heatsinks.
What happens if the device exceeds its maximum junction temperature?
Exceeding the maximum junction temperature of 175°C can result in thermal damage
therefore, proper cooling management is essential.
Can this be used in high-speed switching applications?
Yes, it supports fast switching capabilities, making it suitable for applications requiring rapid signal processing.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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