Infineon HEXFET N-Channel MOSFET, 48 A, 60 V, 3-Pin TO-220AB IRFZ44EPBF

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RS Stock No.:
919-4937
Mfr. Part No.:
IRFZ44EPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

48 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220AB

Series

HEXFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

23 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

60 nC @ 10 V

Height

8.77mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
CN

N-Channel Power MOSFET 60V to 80V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 48A Maximum Continuous Drain Current, 110W Maximum Power Dissipation - IRFZ44EPBF


This MOSFET features an N-channel configuration, making it suitable for industrial and automation applications. It supports high continuous drain current, which is advantageous for power applications. Designed for enhanced efficiency, it is ideal for electric and electronic systems where quick switching and durability are necessary.

Features & Benefits


• Continuous drain current capability up to 48A for effective operation
• Operates at a drain-source voltage of 60V for power management
• Low Rds(on) improves efficiency and reduces power loss
• Packaged in TO-220AB for straightforward installation and heat dissipation
• Fully avalanche rated, ensuring reliability under stress conditions

Applications


• Power supply circuits for increased efficiency
• Motor control in automation tasks
• DC-DC converters for voltage regulation
• High-performance battery management systems
• Electronic switching devices for enhanced control

What is the maximum gate-to-source voltage for safe operation?


The maximum gate-to-source voltage is ±20V, ensuring proper functionality and safety during operation.

How can this component be effectively mounted?


It is designed for through-hole mounting, facilitating a robust attachment to PCB layouts or heatsinks.

What happens if the device exceeds its maximum junction temperature?


Exceeding the maximum junction temperature of 175°C can result in thermal damage

therefore, proper cooling management is essential.

Can this be used in high-speed switching applications?


Yes, it supports fast switching capabilities, making it suitable for applications requiring rapid signal processing.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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