MPN

Infineon HEXFET N-Channel MOSFET, 202 A, 40 V, 3-Pin TO-220AB IRF1404PBF

RS Stock No.:: 913-3837
Mfr. Part No.:: IRF1404PBF
Brand:: Infineon

Infineon HEXFET N-Channel MOSFET, 202 A, 40 V, 3-Pin TO-220AB IRF1404PBF

Bulk discount available

Subtotal (1 tube of 50 units)*

£46.40

(exc. VAT)

£55.70

(inc. VAT)

FREE delivery for orders over £50.00

Temporarily out of stock

1,000 unit(s) shipping from 30 October 2025

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Tube*
50 - 50	£0.928	£46.40
100 - 200	£0.819	£40.95
250 - 450	£0.798	£39.90
500 - 950	£0.777	£38.85
1000 +	£0.758	£37.90

*price indicative

RS Stock No.:: 913-3837
Mfr. Part No.:: IRF1404PBF
Brand:: Infineon

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	202 A
	Maximum Drain Source Voltage	40 V
	Package Type	TO-220AB
	Series	HEXFET
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	4 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	333 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Typical Gate Charge @ Vgs	131 nC @ 10 V
	Maximum Operating Temperature	+175 °C
	Number of Elements per Chip	1
	Transistor Material	Si
	Height	8.77mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 202 A
	Maximum Drain Source Voltage 40 V
	Package Type TO-220AB
	Series HEXFET
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 4 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 333 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Typical Gate Charge @ Vgs 131 nC @ 10 V
	Maximum Operating Temperature +175 °C
	Number of Elements per Chip 1
	Transistor Material Si
	Height 8.77mm
	Minimum Operating Temperature -55 °C

N-Channel Power MOSFET 40V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 202A Maximum Continuous Drain Current, 333W Maximum Power Dissipation - IRF1404PBF

This power MOSFET is designed for high efficiency and dependability across various applications, making it important for professionals in automation, electronics, and electrical engineering. The advanced processing techniques used ensure minimal on-resistance and a wide operational temperature range, broadening its applicability.

Features & Benefits

• Continuous drain current of 202A supports robust performance
• Low Rds(on) of 4mΩ enhances energy efficiency
• Rapid switching capabilities improve overall performance
• Capable of operating at high temperatures, reaching up to 175°C
• Employs Si MOSFET technology for effective thermal management
• Comes in a TO-220AB package for straightforward mounting

Applications

• Employed in industrial automation systems for efficient power switching
• Suitable for high current motor controls and drives
• Ideal for power supply prioritising efficiency
• Utilised in renewable energy systems for effective power management

What type of voltage can be managed?

The device can support voltage levels up to 40V between the drain and source, offering versatility for various voltage regulation applications.

How does its low on-resistance impact system efficiency?

The low Rds(on) significantly reduces power loss during operation, leading to improved system efficiency by minimising energy waste.

What temperatures can it withstand during operation?

It is designed to function efficiently within a temperature range of -55°C to +175°C, making it appropriate for challenging environments.

Can it handle pulsed drain currents?

Yes, it can accommodate pulsed drain currents up to 808A, which provides flexibility for different application needs.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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