Infineon HEXFET N-Channel MOSFET, 48 A, 60 V, 3-Pin TO-220AB IRFZ44EPBF
- RS Stock No.:
- 541-1809
- Mfr. Part No.:
- IRFZ44EPBF
- Brand:
- Infineon
Subtotal (1 unit)*
£0.95
(exc. VAT)
£1.14
(inc. VAT)
FREE delivery for orders over £50.00
- 1 unit(s) shipping from 09 October 2025
Units | Per unit |
---|---|
1 - 9 | £0.95 |
10 - 24 | £0.79 |
25 - 49 | £0.76 |
50 - 99 | £0.72 |
100 + | £0.68 |
*price indicative
- RS Stock No.:
- 541-1809
- Mfr. Part No.:
- IRFZ44EPBF
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 48 A | |
Maximum Drain Source Voltage | 60 V | |
Series | HEXFET | |
Package Type | TO-220AB | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 23 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 110 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Length | 10.54mm | |
Maximum Operating Temperature | +175 °C | |
Number of Elements per Chip | 1 | |
Typical Gate Charge @ Vgs | 60 nC @ 10 V | |
Transistor Material | Si | |
Width | 4.69mm | |
Height | 8.77mm | |
Minimum Operating Temperature | -55 °C | |
Forward Diode Voltage | 1.3V | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 48 A | ||
Maximum Drain Source Voltage 60 V | ||
Series HEXFET | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 23 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 110 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 10.54mm | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 60 nC @ 10 V | ||
Transistor Material Si | ||
Width 4.69mm | ||
Height 8.77mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.3V | ||
N-Channel Power MOSFET 60V to 80V, Infineon
Infineon HEXFET Series MOSFET, 48A Maximum Continuous Drain Current, 110W Maximum Power Dissipation - IRFZ44EPBF
Features & Benefits
• Operates at a drain-source voltage of 60V for power management
• Low Rds(on) improves efficiency and reduces power loss
• Packaged in TO-220AB for straightforward installation and heat dissipation
• Fully avalanche rated, ensuring reliability under stress conditions
Applications
• Motor control in automation tasks
• DC-DC converters for voltage regulation
• High-performance battery management systems
• Electronic switching devices for enhanced control
What is the maximum gate-to-source voltage for safe operation?
How can this component be effectively mounted?
What happens if the device exceeds its maximum junction temperature?
Can this be used in high-speed switching applications?
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