Infineon HEXFET N-Channel MOSFET, 48 A, 60 V, 3-Pin TO-220AB IRFZ44EPBF

RS Stock No.:: 541-1809
Mfr. Part No.:: IRFZ44EPBF
Brand:: Infineon

Infineon HEXFET N-Channel MOSFET, 48 A, 60 V, 3-Pin TO-220AB IRFZ44EPBF

Currently unavailable

We don't know if this item will be back in stock, RS intend to remove it from our range soon.

RS Stock No.:: 541-1809
Mfr. Part No.:: IRFZ44EPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	48 A
	Maximum Drain Source Voltage	60 V
	Package Type	TO-220AB
	Series	HEXFET
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	23 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	110 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Maximum Operating Temperature	+175 °C
	Transistor Material	Si
	Typical Gate Charge @ Vgs	60 nC @ 10 V
	Length	10.54mm
	Number of Elements per Chip	1
	Width	4.69mm
	Forward Diode Voltage	1.3V
	Minimum Operating Temperature	-55 °C
	Height	8.77mm

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 48 A
	Maximum Drain Source Voltage 60 V
	Package Type TO-220AB
	Series HEXFET
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 23 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 110 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Maximum Operating Temperature +175 °C
	Transistor Material Si
	Typical Gate Charge @ Vgs 60 nC @ 10 V
	Length 10.54mm
	Number of Elements per Chip 1
	Width 4.69mm
	Forward Diode Voltage 1.3V
	Minimum Operating Temperature -55 °C
	Height 8.77mm

N-Channel Power MOSFET 60V to 80V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 48A Maximum Continuous Drain Current, 110W Maximum Power Dissipation - IRFZ44EPBF

This MOSFET features an N-channel configuration, making it suitable for industrial and automation applications. It supports high continuous drain current, which is advantageous for power applications. Designed for enhanced efficiency, it is ideal for electric and electronic systems where quick switching and durability are necessary.

Features & Benefits

• Continuous drain current capability up to 48A for effective operation
• Operates at a drain-source voltage of 60V for power management
• Low Rds(on) improves efficiency and reduces power loss
• Packaged in TO-220AB for straightforward installation and heat dissipation
• Fully avalanche rated, ensuring reliability under stress conditions

Applications

• Power supply circuits for increased efficiency
• Motor control in automation tasks
• DC-DC converters for voltage regulation
• High-performance battery management systems
• Electronic switching devices for enhanced control

What is the maximum gate-to-source voltage for safe operation?

The maximum gate-to-source voltage is ±20V, ensuring proper functionality and safety during operation.

How can this component be effectively mounted?

It is designed for through-hole mounting, facilitating a robust attachment to PCB layouts or heatsinks.

What happens if the device exceeds its maximum junction temperature?

Exceeding the maximum junction temperature of 175°C can result in thermal damage

therefore, proper cooling management is essential.

Can this be used in high-speed switching applications?

Yes, it supports fast switching capabilities, making it suitable for applications requiring rapid signal processing.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.