Infineon HEXFET N-Channel MOSFET, 180 A, 100 V, 3-Pin TO-220AB IRFB4110GPBF

Subtotal (1 tube of 50 units)*

£64.85

(exc. VAT)

£77.80

(inc. VAT)

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Last RS stock
  • Final 200 unit(s), ready to ship
Units
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Per Tube*
50 +£1.297£64.85

*price indicative

RS Stock No.:
145-9698
Mfr. Part No.:
IRFB4110GPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

180 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220AB

Series

HEXFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

4.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

370 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

150 nC @ 10 V

Number of Elements per Chip

1

Length

10.67mm

Width

4.83mm

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Height

16.51mm

Minimum Operating Temperature

-55 °C

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