Infineon HEXFET N-Channel MOSFET, 180 A, 100 V, 3-Pin TO-220AB IRFB4110GPBF

Bulk discount available

Subtotal (1 tube of 50 units)*

£121.00

(exc. VAT)

£145.00

(inc. VAT)

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Last RS stock
  • Final 200 unit(s), ready to ship
Units
Per unit
Per Tube*
50 - 50£2.42£121.00
100 - 200£2.299£114.95
250 +£2.154£107.70

*price indicative

RS Stock No.:
145-9698
Mfr. Part No.:
IRFB4110GPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

180 A

Maximum Drain Source Voltage

100 V

Series

HEXFET

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

4.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

370 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Typical Gate Charge @ Vgs

150 nC @ 10 V

Length

10.67mm

Width

4.83mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Height

16.51mm

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