MPN

Infineon HEXFET N-Channel MOSFET, 180 A, 100 V, 3-Pin TO-220AB IRLB4030PBF

RS Stock No.:: 688-7216
Mfr. Part No.:: IRLB4030PBF
Brand:: Infineon

Infineon HEXFET N-Channel MOSFET, 180 A, 100 V, 3-Pin TO-220AB IRLB4030PBF

Bulk discount available

Subtotal (1 pack of 2 units)*

£5.86

(exc. VAT)

£7.04

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

14 unit(s) ready to ship
Plus 2 unit(s) ready to ship from another location
Plus 52 unit(s) shipping from 28 November 2025

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
2 - 18	£2.93	£5.86
20 - 48	£2.49	£4.98
50 - 98	£2.345	£4.69
100 - 198	£2.165	£4.33
200 +	£2.02	£4.04

*price indicative

RS Stock No.:: 688-7216
Mfr. Part No.:: IRLB4030PBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	180 A
	Maximum Drain Source Voltage	100 V
	Package Type	TO-220AB
	Series	HEXFET
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	4 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2.5V
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	370 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-16 V, +16 V
	Number of Elements per Chip	1
	Maximum Operating Temperature	+175 °C
	Typical Gate Charge @ Vgs	87 nC @ 4.5 V
	Width	4.83mm
	Length	10.67mm
	Transistor Material	Si
	Height	9.02mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 180 A
	Maximum Drain Source Voltage 100 V
	Package Type TO-220AB
	Series HEXFET
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 4 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2.5V
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 370 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -16 V, +16 V
	Number of Elements per Chip 1
	Maximum Operating Temperature +175 °C
	Typical Gate Charge @ Vgs 87 nC @ 4.5 V
	Width 4.83mm
	Length 10.67mm
	Transistor Material Si
	Height 9.02mm
	Minimum Operating Temperature -55 °C

Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon

Motor Control MOSFET

Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications.

Synchronous Rectifier MOSFET

A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.