Infineon HEXFET N-Channel MOSFET, 180 A, 100 V, 3-Pin TO-220AB IRLB4030PBF
- RS Stock No.:
- 688-7216
- Mfr. Part No.:
- IRLB4030PBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
£5.86
(exc. VAT)
£7.04
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 50 unit(s) ready to ship
- Plus 2 unit(s) ready to ship from another location
- Plus 596 unit(s) shipping from 10 September 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | £2.93 | £5.86 |
| 20 - 48 | £2.49 | £4.98 |
| 50 - 98 | £2.345 | £4.69 |
| 100 - 198 | £2.165 | £4.33 |
| 200 + | £2.02 | £4.04 |
*price indicative
- RS Stock No.:
- 688-7216
- Mfr. Part No.:
- IRLB4030PBF
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 180 A | |
| Maximum Drain Source Voltage | 100 V | |
| Series | HEXFET | |
| Package Type | TO-220AB | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 4 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 370 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -16 V, +16 V | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 87 nC @ 4.5 V | |
| Length | 10.67mm | |
| Width | 4.83mm | |
| Maximum Operating Temperature | +175 °C | |
| Number of Elements per Chip | 1 | |
| Minimum Operating Temperature | -55 °C | |
| Height | 9.02mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 180 A | ||
Maximum Drain Source Voltage 100 V | ||
Series HEXFET | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 4 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 370 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -16 V, +16 V | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 87 nC @ 4.5 V | ||
Length 10.67mm | ||
Width 4.83mm | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Height 9.02mm | ||
Related links
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin TO-220AB IRLB4030PBF
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin TO-220AB IRFB4110GPBF
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin TO-220AB IRFB4110PBF
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin D2PAK IRFS4010TRLPBF
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin TO-247AC IRFP4110PBF
- Infineon HEXFET N-Channel MOSFET 40 V, 3-Pin TO-220AB IRF1404ZPBF
- Infineon HEXFET N-Channel MOSFET 100 V D2PAK IRLS4030TRLPBF
- Infineon HEXFET N-Channel MOSFET 75 V TO-220AB IRFB3207PBF