N-Channel MOSFET, 180 A, 100 V, 3-Pin TO-220AB Infineon IRFB4110PBF
- RS Stock No.:
- 124-8963
- Mfr. Part No.:
- IRFB4110PBF
- Brand:
- Infineon
5250 In stock - FREE next working day delivery available
Added
Price Each (In a Tube of 50)
£2.75
(exc. VAT)
£3.30
(inc. VAT)
| Units | Per unit | Per Tube* |
| 50 - 50 | £2.75 | £137.50 |
| 100 - 200 | £2.53 | £126.50 |
| 250 + | £2.393 | £119.65 |
| *price indicative | ||
- RS Stock No.:
- 124-8963
- Mfr. Part No.:
- IRFB4110PBF
- Brand:
- Infineon
Technical Reference
Legislation and Compliance
- COO (Country of Origin):
- MX
Product Details
Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon
Motor Control MOSFET
Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications.
Synchronous Rectifier MOSFET
A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 180 A |
| Maximum Drain Source Voltage | 100 V |
| Series | HEXFET |
| Package Type | TO-220AB |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 5 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 370 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Typical Gate Charge @ Vgs | 150 nC @ 10 V |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +175 °C |
| Length | 10.66mm |
| Transistor Material | Si |
| Width | 4.82mm |
| Minimum Operating Temperature | -55 °C |
| Height | 9.02mm |
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