MPN

Infineon HEXFET N-Channel MOSFET, 180 A, 100 V, 3-Pin TO-220AB IRFB4110PBF

RS Stock No.:: 124-8963
Mfr. Part No.:: IRFB4110PBF
Brand:: Infineon

Infineon HEXFET N-Channel MOSFET, 180 A, 100 V, 3-Pin TO-220AB IRFB4110PBF

Bulk discount available

Subtotal (1 tube of 50 units)*

£108.00

(exc. VAT)

£129.50

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

2,900 unit(s) ready to ship

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Tube*
50 - 50	£2.16	£108.00
100 - 200	£1.987	£99.35
250 +	£1.879	£93.95

*price indicative

RS Stock No.:: 124-8963
Mfr. Part No.:: IRFB4110PBF
Brand:: Infineon

Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon

Motor Control MOSFET

Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications.

Synchronous Rectifier MOSFET

A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.

Infineon HEXFET Series MOSFET, 180A Maximum Continuous Drain Current, 370W Maximum Power Dissipation - IRFB4110PBF

This MOSFET serves as an efficient power transistor tailored for applications in automation, electronics, and electrical industries. Its robust construction and precise specifications provide a versatile solution for applications where efficiency and reliability are essential. With an enhancement mode design and an N-channel configuration, it is suitable for high-speed switching operations.

Features & Benefits

• Maximum continuous drain current of 180A supports high performance
• Drain-to-source voltage range of 100V allows for a variety of applications
• Low RDS(on) of 4.5mΩ reduces power loss and enhances efficiency
• Power dissipation capability of up to 370W ensures stability
• Improved thermal characteristics foster reliability in extreme conditions
• Full characterisation on avalanche and dynamic dv/dt ruggedness promotes durability

Applications

• Employed in high-efficiency synchronous rectification for power supplies
• Suitable for uninterruptible power supply systems
• Ideal for high-speed power switching circuits
• Applicable in hard switched and high frequency circuits

What is the suitable operating temperature range for optimal performance?

It operates effectively within -55°C to +175°C, ensuring functionality across various environments.

How does the MOSFET minimise energy loss in circuits?

The low RDS(on) of 4.5mΩ significantly cuts conduction losses, allowing for efficient operation in power electronics.

Can it be used in high-frequency applications?

Yes, its design facilitates high-speed switching, making it appropriate for applications requiring rapid on-off transitions.

What are the thermal resistance values for proper mounting?

The junction-to-case thermal resistance is 0.402°C/W, while the case-to-sink resistance is 0.50°C/W, enabling effective heat dissipation.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	180 A
	Maximum Drain Source Voltage	100 V
	Package Type	TO-220AB
	Series	HEXFET
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	5 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	370 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Typical Gate Charge @ Vgs	150 nC @ 10 V
	Transistor Material	Si
	Length	10.66mm
	Maximum Operating Temperature	+175 °C
	Number of Elements per Chip	1
	Width	4.82mm
	Height	9.02mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 180 A
	Maximum Drain Source Voltage 100 V
	Package Type TO-220AB
	Series HEXFET
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 5 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 370 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Typical Gate Charge @ Vgs 150 nC @ 10 V
	Transistor Material Si
	Length 10.66mm
	Maximum Operating Temperature +175 °C
	Number of Elements per Chip 1
	Width 4.82mm
	Height 9.02mm
	Minimum Operating Temperature -55 °C

Be the first to know about our latest products and services

Join our mailing list today:

The personal information you provide to us when signing up to the mailing list will be processed in line with our privacy policy.